Related papers: Nonlinear Electrical Spin Conversion in a Biased F…
Antiferromagnets offer an attractive platform for spintronics due to their absence of net magnetization and ultrafast spin dynamics, yet their intrinsically spin-compensated electronic structure has traditionally limited their active role…
Tunnel spin polarization in a piezoelectric AlGaN/GaN double barrier structure is calculated. It is shown that the piezoelectric field and the spontaneous electrical polarization increase an efficiency of the tunnel spin injection. The…
The primary requirement for achieving spin-selective electron transfer in a nanojunction possessing a magnetic system with zero net magnetization is to break the symmetry between the up and down spin sub-Hamiltonians. Circumventing the…
Material systems that exhibit tunable spin-selective conductivity are key components of spintronic technologies. Here we demonstrate a novel type of spin-selective transport, based on the unusual Landau level (LL) sequence observed in…
Electrical-controllable antiferromagnet tunnel junction is a key goal in spintronics, holding immense promise for ultra-dense and ultra-stable antiferromagnetic memory with high processing speed for modern information technology. Here, we…
Antiferromagnetic materials with spin splitting have attracted considerable attention for their symmetry-enabled anisotropic spin textures that sustain a zero net magnetization, thereby facilitating efficient spin-current generation. In…
We present a formula for tunneling conductance in ballistic ferromagnet/ferromagnetic insulator/superconductor junctions where the superconducting state has opposite spin pairing symmetry. The formula can involve correctly a ferromagnetism…
We fabricated a non-local spin valve device with Co-MgO injector/detector tunnel contacts on a graphene spin channel. In this device, the spin polarization of the injector contact can be tuned by both the injector current bias and the gate…
Spin-dependent transport through an interacting single-level quantum dot coupled to ferromagnetic leads with non-collinear magnetizations is analyzed theoretically. The transport properties and average spin of the dot are investigated…
The ballistic spin-filter effect from a ferromagnetic metal into a semiconductor has theoretically been studied with an intention of detecting the spin polarizability of density of states in FM layer at a higher energy level. The physical…
Spin dynamics is considered in ferromagnets consisting of electron and nuclear subsystems interacting with each other through hyperfine forces. In addition, the ferromagnetic sample is coupled with a resonance electric circuit. Under these…
Conventional and spin-related thermoelectric effects in transport through a magnetic tunnel junction with a large-spin impurity, such as a magnetic molecule or atom, embedded into the corresponding barrier are studied theoretically in the…
We investigate spin-dependent quasiparticle and Cooper-pair transport through a central node interfaced with two superconductors and two ferromagnets. We demonstrate that voltage biasing of the ferromagnetic contacts induces superconducting…
We consider spin-polarized transport in a quantum spin Hall antidot system coupled to normal leads. Due to the helical nature of the conducting edge states, the screening potential at the dot region becomes spin dependent without external…
We demonstrate experimentally the electrical ballistic electron spin injection from a ferromagnetic metal / tunnel barrier contact into a semiconductor III-V heterostructure. We introduce the Oblique Hanle Effect technique for reliable…
Spin-polarized transport through a marginal Fermi liquid (MFL) which is connected to two noncollinear ferromagnets via tunnel junctions is discussed in terms of the nonequilibrium Green function approach. It is found that the…
Spin-dependent transport is investigated in ballistic regime through the interface between a ferromagnet and a spin spiral. We show that spin-dependent interferences lead to a new type of diffraction called "spin-diffraction". It is shown…
We treat the spin injection and extraction via a ferromagnetic metal/semiconductor Schottky barrier as a quantum scattering problem. This enables the theory to explain a number of phenomena involving spin-dependent current through the…
We report a theoretical study on the spin and electron transport in the nonlocal lateral spin valve with non-collinear magnetic configuration. The nonlocal magnetoresistance, defined as the voltage difference on the detection lead over the…
A domain wall separating two oppositely magnetized regions in a ferromagnetic semiconductor exhibits, under appropriate conditions, strongly nonlinear I-V characteristics similar to those of a p-n diode. We study these characteristics as…