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We present SiO J=2-1 maps of the Sgr B2 molecular cloud, which show shocked gas with a turbulent substructure comprising at least three cavities at velocities of [10,40] km s$^{-1}$ and an arc at velocities of [-20,10] km s$^{-1}$. The…

Using ab initio molecular dynamics (AIMD) simulations, based on density functional theory that also accounts for van der Waals interactions, we study the oxidation of gas phase CO on MoSe$_2$ with a Se vacancy and oxygen coverage of…

Chemical Physics · Physics 2024-11-25 Raúl Bombín , Ricardo Díez Muiño , J. Iñaki Juaristi , Maite Alducin

We report a comprehensive first-principles study of the thermodynamics and transport of intrinsic point defects in layered oxide cathode materials LiMO$_2$ (M=Co, Ni), using density-functional theory and the Heyd-Scuseria-Ernzerhof screened…

Materials Science · Physics 2014-12-17 Khang Hoang , Michelle D. Johannes

Accurate ab-initio pseudopotential calculations within density functional theory in the LDA approximation have been performed for structural properties and stability of ZnSe/GaAs(001) defected heterostructures. There is a strong…

Materials Science · Physics 2011-12-30 A. Stroppa , M. Peressi

Basic vacancy defects in twodimensional silicon carbide (2D-SiC) are examined by means of density functional theory calculations to explore their magneto-optical properties as well as their potential in quantum technologies. In particular,…

Understanding the interaction between dopants and semiconductor-oxide interfaces is an increasingly important concern in the drive to further miniaturize modern transistors. To this end, using a combination of first-principles…

Materials Science · Physics 2013-12-16 Fabiano Corsetti , Arash A. Mostofi

The electronic, structural and vibrational properties of small carbon interstitial and antisite clusters are investigated by ab initio methods in 3C and 4H-SiC. The defects possess sizable dissociation energies and may be formed via…

Materials Science · Physics 2007-05-23 Alexander Mattausch , Michel Bockstedte , Oleg Pankratov

We study the chemical nature of the bonding of an oxide layer to the parent metal. In order to disentangle chemical effects from strain/misfit, Ti(10$\bar{1}$0)/TiO$_{2}$(100) interface has been chosen. We use the density functional…

Materials Science · Physics 2012-12-10 Linggang Zhu , Graeme J. Ackland

Locally, the atomic structure in well annealed amorphous silicon appears similar to that of crystalline silicon. We address here the question whether a point defect, specifically a vacancy, in amorphous silicon also resembles that in the…

Materials Science · Physics 2020-02-26 Andreas Pedersen , Laurent Pizzagalli , Hannes Jonsson

On the basis of density functional calculations and using Bader's atom in molecule theory, this article presents quantitative microscopic analyses on the bonding properties of amorphous silicon (a-Si) which could reflect in the observable…

Materials Science · Physics 2019-04-11 Zahra Nourbakhsh , Hadi Akbarzadeh

We have studied intrinsic defect complexes in In$_2$O$_3$ using ab initio random structure searching (AIRSS). Our first-principles density-functional-theory calculations predict the thermodynamic stability of several novel defect…

Materials Science · Physics 2016-09-16 Jamie M. Wynn , Richard J. Needs , Andrew J. Morris

Two-dimensional (2D) materials have emerged as promising platforms for quantum technologies and optoelectronics, with defects playing a crucial role in their properties. We present a comprehensive density functional theory study of silicon…

Materials Science · Physics 2025-10-28 Abhirup Patra

The two-dimensional electron gas (2DEG) found in KTaO3-based interfaces has garnered attention due to its remarkable electronic properties. In this study, we investigated the conducting system embedded at the Si3N4/Al//KTO(110)…

The main feature of amorphous materials is the presence of excess vibrational modes at low energies, giving rise to the so called "boson peak" in neutron and optical spectroscopy. These same modes manifest themselves as two level systems…

Mesoscale and Nanoscale Physics · Physics 2020-10-07 M. Belli , M. Fanciulli , R. de Sousa

We predict the existence of new two dimensional silicon carbide nanostructure employing ab initio density-functional theory calculations. These structures are composed of tetragonal and hexagonal rings with C-C and Si-C bonds arranged in a…

Materials Science · Physics 2020-12-16 Qun Wei , Ying Yang , Guang Yang , Xihong Peng

A class of silicon carbide cage clusters with two carbon atoms inside the silicon cage and with high stabilities are presented. The theoretical formalism used is Hartree-Fock theory followed by second order many body perturbation theory to…

Atomic and Molecular Clusters · Physics 2009-11-10 M. N. Huda , A. K. Ray

We introduce a first-principles study to clarify the carrier-scattering property at the SiC/SiO$_2$. Interestingly, the electron transport at the conduction-band edge is significantly affected by the introduction of oxygen, even though…

Materials Science · Physics 2017-02-01 Shigeru Iwase , Christopher James Kirkham , Tomoya Ono

We present a millimetre molecular line survey of seven high mass loss rate carbon stars in both the northern and southern skies. A total of 196 emission lines (47 transitions) from 24 molecular species were detected. The observed CO…

Astrophysics · Physics 2009-11-07 P. M. Woods , F. L. Schoeier , L. -A. Nyman , H. Olofsson

The formation energies of the oxygen vacancy and titanium interstitial in rutile TiO2 were calculated by the screened exchange (sX) hybrid density functional method, which gives a band gap of 3.1 eV, close to the experimental value. The O…

Atomic and Molecular Clusters · Physics 2015-06-05 Hsin-Yi Lee , Stewart J. Clark , John Robertson

We have performed electronic state calculations to clarify the initial stage of the oxidation of the Si- and C-faces in 4H-SiC based on the density-functional theory. We investigate how each Si and C atomic site is oxidized on C- and…

Materials Science · Physics 2016-12-02 Yu-ichiro Matsushita , Atsushi Oshiyama