Related papers: Spin Seebeck imaging of spin-torque switching in a…
Antiferromagnets are beneficial for future spintronic applications due to their zero magnetic moment and ultrafast dynamics. But gaining direct access to their antiferromagnetic order and identifying the properties of individual magnetic…
We demonstrate stable and reversible current induced switching of large-area ($> 100\;\mu m^2$) antiferromagnetic domains in NiO/Pt by performing concurrent transport and magneto-optical imaging measurements in an adapted Kerr microscope.…
Understanding the electrical manipulation of antiferromagnetic order is a crucial aspect to enable the design of antiferromagnetic devices working at THz frequency. Focusing on collinear insulating antiferromagnetic NiO/Pt thin films as a…
We develop a low-temperature, long-wavelength theory for the interfacial spin Seebeck effect (SSE) in easy-axis antiferromagnets. The field-induced spin-flop (SF) transition of N\'eel order is associated with a qualitative change in SSE…
Ultrafast electric manipulation of magnetic order in solids is critical for the development of future terahertz data processing. A fascinating concept for such high-speed operation is offered in metallic antiferromagnets by N\'eel…
For a long time, there have been no efficient ways of controlling antiferromagnets. Quite a strong magnetic field was required to manipulate the magnetic moments because of a high molecular field and a small magnetic susceptibility. It was…
Antiferromagnets offer spintronic device characteristics unparalleled in ferromagnets owing to their lack of stray fields, THz spin dynamics, and rich materials landscape. Microscopic imaging of aniferromagnetic domains is one of the key…
NiO is a prototypical antiferromagnet with a characteristic resonance frequency in the THz range. From atomistic spin dynamics simulations that take into account the crystallographic structure of NiO, and in particular a magnetic anisotropy…
We investigate the antiferromagnetic spin Seebeck effect across the spin-flop transition in a numerical simulation based on the time-dependent Ginzburg-Landau equation for a bilayer of a uniaxial insulating antiferromagnet and an adjacent…
We investigate the current-induced switching of the Neel order in NiO(001)/Pt heterostructures,which is manifested electrically via the spin Hall magnetoresistance. Significant reversible changes in the longitudinal and transverse…
Antiferromagnets are outstanding candidates for the next generation of spintronic applications, with great potential for downscaling and decreasing power consumption. Recently, the manipulation of bulk properties of antiferromagnets has…
Recent demonstrations of electrical detection and manipulation of antiferromagnets (AFMs) have opened new opportunities towards robust and ultrafast spintronics devices. However, it is difficult to establish the connection between the…
We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We…
One of the main obstacles that prevents practical applications of antiferromagnets is the difficulty of manipulating the magnetic order parameter. Recently, following the theoretical prediction [J. \v{Z}elezn\'y et al., PRL 113, 157201…
The (001) surface of NiO, an antiferromagnet at room temperature, was investigated under ultra-high vacuum conditions with frequency modulation atomic force microscopy (FM-AFM). The antiferromagnetic coupling between ions leads to a spin…
While ferromagnets are at the heart of daily life applications, their large magnetization and resulting energy cost for switching bring into question their suitability for reliable low-power spintronic devices. Non-collinear…
We report the ultrafast, (sub)picosecond reduction of the antiferromagnetic order of the insulating NiO thin film in a Pt/NiO bilayer. This reduction of the antiferromagnetic order is not present in pure NiO thin films after a strong…
Electrical manipulation of spin textures inside antiferromagnets represents a new opportunity for developing spintronics with superior speed and high device density. Injecting spin currents into antiferromagnets and realizing efficient…
Antiferromagnets have large potential for ultrafast coherent switching of magnetic order with minimum heat dissipation. In novel materials such as Mn$_2$Au and CuMnAs, electric rather than magnetic fields may control antiferromagnetic order…
Antiferromagnetic spintronics have attracted wide attention due to its great potential in constructing ultra-dense and ultra-fast antiferromagnetic memory that suits modern high-performance information technology. The electrical 180o…