Related papers: Excitons in InGaAs Quantum Dots without Electron W…
The scalable integration of solid-state quantum emitters into photonic nanostructures remains a central challenge for quantum photonic technologies. Here, we demonstrate a robust and streamlined integration strategy that tackles the…
Strain-free GaAs/AlGaAs semiconductor quantum dots (QDs) grown by droplet etching and nanohole infilling (DENI) are highly promising candidates for the on-demand generation of indistinguishable and entangled photon sources. The…
Non-polar (11-20) a-plane quantum dots (QDs) are strong candidates for both > 200 K on-chip ultrafast polarized single-photon generation and the investigation of high temperature semiconductor QD photophysics. In this work, we report…
In this chapter we will discuss the technology and experimental techniques to realize quantum dot (QD) single photon sources combining high outcoupling efficiencies and highest degrees of non-postselected photon indistinguishability. The…
Highly coherent quantum emitters operating in the telecommunication C-band (1530 - 1565nm), where ultra-low-loss fibers and photonic circuits are available, are crucial to the development of scalable quantum technologies. In this work, we…
We investigate the optical properties of InAs quantum dots grown by molecular beam epitaxy on GaAs(110) using Bi as a surfactant. The quantum dots are synthesized on planar GaAs(110) substrates as well as on the {110} sidewall facets of…
A high-quality quantum dot (QD) single-photon source is a key resource for quantum information processing. Exciting a QD emitter resonantly can greatly suppress decoherence processes and lead to highly indistinguishable single-photon…
The intrinsic fine structure splittings (FSSs) of the exciton states of semiconductor quantum dots (QDs) are known to be the major obstacle for realizing the QD-based entangled photon pair emitters. In this study, we present a theoretical…
We demonstrate nearly-spherical, strain-free, self-assembled Ge quantum dots (QDs) fully encapsulated by AlAs, grown on (100) GaAs by molecular beam epitaxy (MBE). The QDs were formed without a wetting layer using a high temperature,…
Photonic quantum technologies call for scalable quantum light sources that can be integrated, while providing the end user with single and entangled photons on-demand. One promising candidate are strain free GaAs/AlGaAs quantum dots…
Colloidal quantum dots (QDs) of group III-V are considered as promising candidates for next-generation environmentally friendly light emitting devices, yet there appears to be only limited understanding of the underlying electronic and…
We report a correlative microscopy study of a sample containing three stacks of InGaN/GaN quantum dots (QDs) grown at different substrate temperature, each stack consisting of 3 layers of QDs. Decreasing the substrate temperature along the…
In this paper, we describe the growth and characterization of 530-nm-thick superlattices (100 periods) of AlxGa1-xN/AlN (x = 0, 0.1) Stranski-Krastanov quantum dots for application as the active region of electron-beam pumped ultraviolet…
A very long lifetime emission with non-single exponential decay characteristic has been reported for single InAs/GaAs quantum dot (QD) samples, in which there exists a long-lived metastable state in the wetting layer (WL) [ACS Photonics…
Large-scale quantum networks require the implementation of long-lived quantum memories as stationary nodes interacting with qubits of light. Epitaxially grown quantum dots hold great potential for the on-demand generation of single and…
We demonstrate control by applied electric field of the charge states in single self-assembled InP quantum dots placed in GaInP Schottky structures grown by metalorganic vapor phase epitaxy. This has been enabled by growth optimization…
The emission cascade of a single quantum dot is a promising source of entangled photons. A prerequisite for this source is the use of a symmetric dot analogous to an atom in a vacuum, but the simultaneous achievement of structural symmetry…
We report on molecular beam epitaxy growth of symmetric InAs/InP quantum dots (QDs) emitting at telecom C-band (1.55 $\mu$m) with ultra-small excitonic fine-structure splitting of ~2 $\mu$eV. The QDs are grown on distributed Bragg reflector…
We used AlGaSb/AlGaAs material system for a theoretical study of photovoltaic performance of the proposed GaAs-based solar cell in which the type-II quantum dot (QDs) absorber is spatially separated from the depletion region. Due to…
Optically active III-V group semiconductor quantum dots (QDs) are the leading element of the upcoming safe quantum communication. However, the entire electronic and IT infrastructure relies on silicon-based devices, with silicon also…