Related papers: Defect-induced exchange bias in a single SrRuO3 la…
We investigate the polarity-dependent field-induced resistive switching phenomenon driven by electric pulses in perovskite oxides. Our data show that the switching is a common occurrence restricted to an interfacial layer between a…
We report on the functionalization of multiferroic BiFeO3 epitaxial films for spintronics. A first example is provided by the use of ultrathin layers of BiFeO3 as tunnel barriers in magnetic tunnel junctions with La2/3Sr1/3MnO3 and Co…
Ion-irradiation-induced modifications of a periodic Pt/C multilayer system containing Fe impurity have been analyzed by transmission electron microscopy (TEM). The multilayer stack with 16 Pt/C layer pairs (period 4.23 nm) was fabricated on…
One prominent structural feature of ionic liquids near surfaces is formation of alternating layers of anions and cations. However, how this layering responds to applied potential is poorly understood. We focus on the structure of…
We extend the model of ferromagnetic superexchange in dilute magnetic semiconductors to the ferromagnetically ordered highly insulating compounds (dilute magnetic dielectrics). The intrinsic ferromagnetism without free carriers is observed…
Magnetotransport and magnetism of epitaxial SmTiO3/EuTiO3 heterostructures grown by molecular beam epitaxy are investigated. It is shown that the polar discontinuity at the interface introduces ~ 3.9x10^14 cm^-2 carriers into the EuTiO3.…
We present low temperature magnetoresistance measurements of Ar-irradiated SrTiO3 under an applied electrostatic field. The electric field, applied through a back gate bias, modulates both the mobility and sheet density, with a greater…
Magnetic 3d-ions doped into wide-gap oxides show signatures of room temperature ferromagnetism, although their concentration is two orders of magnitude smaller than that in conventional magnets. The prototype of these exceptional materials…
Exchange interaction strongly influences the long-range behavior of localized electron orbitals and quantum tunneling amplitudes.In the Hartree-Fock approximation the exchange produces a power-law decay instead of the usual exponential…
We report here sign reversal and tunability of exchange bias in AuFe cosputtered films of thickness about 63 nm. As deposited film exhibits exchange bias effect at room temperature without external triggering field and its magnitude…
Exchange bias is usually rationalized invoking spin pinning effects caused by uncompensated antiferromagnetic interfaces. However, for compensated antiferromagnets other extrinsic factors, such as interface roughness or spin canting, have…
We observed a strong modulation in the current-voltage characteristics of SrRuO$_3$/Nb:SrTiO$_3$ Schottky junctions by Mn substitution in SrRuO$_3$, which induces a metal-insulator transition in bulk. The temperature dependence of the…
The gating effect achieved by an ionic liquid and its electric double layer allows for charge transfer which can be an order of magnitude larger than with conventional dielectrics. However, the large charged ions also causes inevitable…
Variety of conducting heterointerfaces have been made between SrTiO3 substrates and thin capping layers of distinctly different oxide materials that can be classified into polar band insulators (e.g. LaAlO3), polar Mott insulators (e.g.…
Exchange bias is a phenomenon critical to solid-state technologies that require spin valves or non-volatile magnetic memory. The phenomenon is usually studied in the context of magnetic interfaces between antiferromagnets and ferromagnets,…
We report on the study of magnetic properties of the La1.5Ca0.5CoIrO6 double perovskite. Via ac magnetic susceptibility we have observed evidence of weak ferromagnetism and reentrant spin glass behavior on an antiferromagnetic matrix.…
We report controlled formation of sub-100 nm-thin electron channels in SrTiO$_3$ by doping with oxygen vacancies induced by Ar$^+$-ion irradiation. The conducting channels exhibit a consistent high electron mobility (~15,000…
At low temperatures, electrons in semiconductors are bound to shallow donor impurity ions, neutralizing their charge in equilibrium. Inelastic scattering of other externally-injected conduction electrons accelerated by electric fields can…
We report on the non-linear in-plane electrical transport in coherently grown [La0.7Sr0.3MnO3/SrTiO3] multilayers with ultrathin (< 3 nm) single layers. Current-induced switching of the conductance, with low conductance at larger currents,…
We report the discovery of a positive exchange bias between Ni80Fe20 (Py) and twined (10-10)-Cr2O3 film near its blocking temperature (TB) when it is cooled in an in-plane magnetic field applied along 45 degrees from the two spin…