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Silicon photonics has evolved from lab research to commercial products in the past decade as it plays an increasingly crucial role in data communication for next-generation data centers and high performance computing1. Recently,…
The naturally existing chalcogenide Bi2Se3 is topologically nontrivial due to the band inversion caused by strong spin-orbit coupling inside the bulk of the material. The surface states are spin polarized, protected by the time-inversion…
The photosensitivity of silicon is inherently very low in the visible electromagnetic spectrum, and it drops rapidly beyond 800 nm in near-infrared wavelengths. Herein, we have experimentally demonstrated a technique utilizing…
A theoretical study of the newly identified Ti5Al2C3 belonging to the MAX phases has been performed by using the first-principles pseudopotential plane-wave method within the generalized gradient approximation (GGA). The energy band…
The direct growth of III-V materials on silicon is a key enabler for developing monolithically integrated lasers, offering substantial potential for ultra-dense photonic integration in vital communications and computing technologies.…
Any large-scale spiking neuromorphic system striving for complexity at the level of the human brain and beyond will need to be co-optimized for communication and computation. Such reasoning leads to the proposal for optoelectronic…
Optoelectronic technologies are based on families of semiconductor alloys. It is rare that a new semiconductor alloy family is developed to the point where epitaxial growth is possible; since the 1950s, this has happened approximately once…
The application of new materials in nanotechnology opens new perspectives and enables ground-breaking innovations. Two-dimensional van der Waals materials and more specific, 2D chalcogenides are a promising class of new materials awaiting…
V$_3$Si thin films are known to be superconducting with transition temperatures up to 15 K, depending on the annealing temperature and the properties of the substrate underneath. Here we investigate the film structural properties with the…
High k gadolinium oxide thin layers were deposited on silicon by high-pressure sputtering (HPS). In order to optimize the properties for microelectronic applications, different deposition conditions were used. Ti (scavenger) and Pt…
The hybrid perovskite CH3NH3PbX3 (X= Cl, Br, I) is a promising material for developing novel optoelectronic devices. Owing to the intrinsic non-layer structure, it remains challenging to synthesize molecularly thin CH3NH3PbX3 with large…
A thin film technology compatible with multilayer device fabrication is critical for exploring the potential of the 39-K superconductor magnesium diboride for superconducting electronics. Using a Hybrid Physical-Chemical Vapor Deposition…
Vanadium silicide (V$_3$Si) is a promising superconductor for integration with silicon-based electronics, however the interfacial growth kinetics have a strong influence on the resulting superconducting properties and are not yet fully…
The recent discovery of topological insulators with exotic metallic surface states has garnered great interest in the fields of condensed matter physics and materials science. A number of spectacular quantum phenomena have been predicted…
Bi$_2$Te$_3$ is a material with high efficiency of thermoelectric energy conversion. Recently, it was also recognized as a topological insulator, and is often used as the basis for creation of other types of topological matter. Pulsed laser…
The state-of-the-art CMOS technology has started to adopt three-dimensional (3D) integration approaches, enabling continuous chip density increment and performance improvement, while alleviating difficulties encountered in traditional…
Topological insulators are innovative materials with semiconducting bulk together with surface states forming a Dirac cone, which ensure metallic conduction in the surface plane. Therefore, topological insulators represent an ideal platform…
3D interconnects have emerged as a solution to address the scaling issues of interconnect bandwidth and the memory wall problem in high-performance computing (HPC), such as High-Bandwidth Memory (HBM). However, the copper-based electrical…
$\beta$-Ga$_2$O$_3$ is a next-generation ultra wide bandgap semiconductor (E$_g$ = 4.8 eV to 4.9 eV) that can be homoepitaxially grown on commercial substrates, enabling next-generation power electronic devices among other important…
Vanadium silicide, V$_3$Si, is a promising superconductor for silicon-based superconducting (SC) devices due to its compatibility with silicon substrates and its potential for integration into existing semiconductor technologies. However,…