The application of new materials in nanotechnology opens new perspectives and enables ground-breaking innovations. Two-dimensional van der Waals materials and more specific, 2D chalcogenides are a promising class of new materials awaiting their usage in the semiconductor industry. However, the integration of van der Waals materials relying on industry-compatible manufacturing processes is still a major challenge. This is currently restricting the application of these new materials to the research laboratories environment only. The large-area and single-crystalline growth of van der Waals materials is one of the most important requirements to meet the challenging demands implied by the semiconductor industry. This review contributes to a more generalized understanding on the integration of van der Waals materials - and in more specific 2D chalcogenides - through the growth process of epitaxy. This, can pursue further the aspiration of large-area, single-crystalline and defect-free epitaxial integration of (quasi) van der Waals homo- and heterostructures into the great world of the semiconductor industry.
@article{arxiv.2010.04657,
title = {Epitaxy of new layered materials: 2D chalcogenides and challenges of weak van der Waals interactions},
author = {Wouter Mortelmans and Stefan De Gendt and Marc Heyns and Clement Merckling},
journal= {arXiv preprint arXiv:2010.04657},
year = {2020}
}