Related papers: Investigating laser induced phase engineering in M…
Recent development of ultrashort laser pulses allows for optical control of structural and electronic properties of complex quantum materials. The layered transition metal dichalcogenide MoTe2, which can crystalize into several different…
MoS2 atomic layers have recently attracted much interest because of their two-dimensional structure as well as tunable optical, electrical, and mechanical properties for next generation electronic and electro-optical devices. Here we have…
Two-dimensional (2D) materials are a new type of materials under intense study because of their interesting physical properties and wide range of potential applications from nanoelectronics to sensing and photonics. Monolayers of…
Controlling the threshold voltage (Vth) of a field-effect transistor is important for realizing robust logic circuits. Here, we report a facile approach to achieve bidirectional Vth tuning of molybdenum disulfide (MoS2) field-effect…
The bandgap dependence on the number of atomic layers of some families of 2D-materials, can be exploited to engineer and use lateral heterostructures (LHs) as high-performance Field-Effect Transistors (FET). This option can provide very…
This paper introduces monolayer molybdenum disulfide (MoS2) based junction-less (JL) field-effect transistor (FET) and evaluates its performance at the smallest foreseeable (5.9 nm) transistor channel length as per the International…
During the study of resistive switching devices, researchers have found that the influence of the insertion layer cannot be ignored. Many reports have confirmed that the appropriate insertion layer can significantly improve the performance…
In this paper we explore the capabilities of MoS2 and WS2 2D monolayers to produce radiation in the terahertz range by generation of high-order harmonics. This phenomenon, which is a result of the non-linear response of the electronic…
We report on a modified transfer technique for atomically thin materials integrated onto microelectromechanical systems (MEMS) for studying strain physics and creating strain-based devices. Our method tolerates the non-planar structures and…
For the first time, polyethyleneimine (PEI) doping on multilayer MoS2 field-effect transistors are investigated. A 2.6 times reduction in sheet resistance, and 1.2 times reduction in contact resistance have been achieved. The enhanced…
Charge transport through a rectangular vector potential barrier modulated by a continuum laser in monolayer phosphorene is studied theoretically in the ballistic regime along the line of Floquet formalism. Laser free transmission profile…
Phase change materials (PCMs) have gained a tremendous interest as a means to actively tune nanophotonic devices through the large optical modulation produced by their amorphous to crystalline reversible transition. Recently, materials such…
Thermal tuning of the optical refractive index in the waveguides to control light phase accumulation is essential in photonic integrated systems and applications. In silicon photonics, microheaters are mainly realized by metal wires or…
We demonstrated selective gas sensing with MoS2 thin-film transistors using the change in the channel conductance, characteristic transient time and low-frequency current fluctuations as the sensing parameters. The back-gated MoS2 thin-film…
Microscopic and dynamic control over quantum states is essential for bridging fundamental studies of material properties to device function. Realizing such control at combined high spatial resolution and ultrafast temporal precision remains…
Semiconducting two-dimensional (2D) transition metal dichalcogenides (TMDs) are emerging as top candidates for post-silicon electronics. While most of 2D TMDs exhibit isotropic behavior, lowering the lattice symmetry could induce…
Displacive martensitic phase transition is potentially promising in semiconductor based data storage applications with fast switching speed. In addition to traditional phase transition materials, the recently discovered two-dimensional…
Laser excitation has emerged as a means to expose hidden states of matter and promote phase transitions on demand. Such laser induced transformations are often rendered possible owing to the delivery of spatially and/or temporally…
Field-effect transistors (FETs) with non-covalently functionalised molybdenum disulfide (MoS2) channels grown by chemical vapour deposition (CVD) on SiO2 are reported. The dangling-bond-free surface of MoS2 was functionalised with a…
Using ab initio tight-binding approaches, we investigate Floquet band engineering of the 1T' phase of transition metal dichalcogenides (MX2, M = W, Mo and X = Te, Se, S) monolayers under the irradiation with circularly polarized light. Our…