Related papers: Noisy defects in a doped Mott insulator
The phase diagram of the high-Tc cuprates is dominated by the Mott insulating phase of the parent compounds. As we approach it from large doping, a standard Fermi-liquid gradually turns into a bad non-Fermi liquid metal, a process which…
We study the effect of doping in the suppression of tunneling observed in multi-walled nanotubes, incorporating as well the influence of the finite dimensions of the system. A scaling approach allows us to encompass the different values of…
Momentum resolved inelastic resonant x-ray scattering is used to map the evolution of charge excitations over a large range of energies, momenta and doping levels in the electron doped Mott insulator class Nd$_{2-x}$Ce$_x$CuO$_4$. As the…
The hydrodynamics of a lattice Bose gas in a time-dependent external potential is studied in a mean-field approximation. The conditions under which a Mott insulating region can melt, and the local density adjust to the new potential, are…
Characterizing and controlling the out-of-equilibrium state of nanostructured Mott insulators hold great promises for emerging quantum technologies while providing an exciting playground for investigating fundamental physics of…
This study investigates the influence of indium doping on the defect states in (Bi0.3Sb0.7)2Te3 (BST) ternary topological insulators. Thin (10 nm) and thick (60 nm) films of pristine BST and indium-doped BST (In0.14(Bi0.3Sb0.7)1.86Te3) were…
Adsorption of 1/3 monolayer of Sn on a heavily-doped p-type Si(111) substrate results in the formation of a hole-doped Mott insulator, with electronic properties that are remarkably similar to those of the high-Tc copper oxide compounds. In…
Quantum dots (QDs) investigated through electron transport measurements often exhibit varying, state-dependent tunnel couplings to the leads. Under specific conditions, weakly coupled states can result in a strong suppression of the…
We study the problem of designing an artificial Mott insulator in a correlated oxide heterostructure. We consider the extreme limit of quantum confinement based on ionic discontinuity doping, and argue that a unique dimer Mott insulator can…
Within the framework of kinetic-energy-driven superconductivity, the asymmetric doping dependence of superconductivity between the hole- and electron-doped triangular-lattice superconductors has been studied. It is shown that although the…
We use a two-color lattice to break the homogeneous site occupation of an atomic Mott Insulator of bosonic 87Rb. We detect the disruption of the ordered Mott domains via noise correlation analysis of the atomic density distribution after…
High temperature superconductivity in cuprates is realized by doping the Mott insulator with charge carriers. A central issue is how such an insulating state can evolve into a conducting or superconducting state when charge carriers are…
The kinetic features of holes (electrons) in the Hubbard model are studied using a variational Monte Carlo method. In doped Mott insulators (U>U_co), holes are classified, in the sense of conduction, into two categories: (i) The holes…
We observe a series of sharp resonant features in the tunnelling differential conductance of InAs quantum dots. We found that dissipative quantum tunnelling has a strong influence on the operation of nano-devices. Because of such tunnelling…
Quantum gases in optical lattices offer an opportunity to experimentally realize and explore condensed matter models in a clean, tunable system. We investigate the Bose-Hubbard model on a microscopic level using single atom-single lattice…
High-temperature superconductivity emerges in the CuO$_2$ plane upon doping a Mott insulator. To ascertain the influence of Mott physics plus short-range correlations, we solve a three-band copper-oxide model in the charge-transfer regime…
The shot noise of current through a metallic double quantum dot structure exhibiting negative differential conductance is studied. We can exactly solve the master equation and derive an analytical expression of the spectral density of…
Application of a significantly large bias voltage to small Bi2Sr2CaCu2O8+x mesa structures leads to persistent doping of the mesas. Here we employ this effect for analysis of the doping dependence of the electronic spectra of Bi-2212 single…
Control of dopants in silicon remains the most important approach to tailoring the properties of electronic materials for integrated circuits, with Group V impurities the most important n-type dopants. At the same time, silicon is finding…
Realistic simulations of current ultra-cold atoms experiments in optical lattices show that the ramping up of the optical lattice is significantly nonadiabatic, implying that experimentally prepared Mott insulators are not really in the…