Related papers: Getting to the Bottom of Negative Capacitance FETs

Negative differential conductivity (NDC) is a widely exploited effect in modern electronic components. Here, a proof-of-principle is given for the observation of NDC in a quantum transport device for neutral atoms employing a multi-mode…

Spin field-effect transistors (SFETs) are promising candidates for low-power spin-based electronics, yet existing realizations that rely on spin-orbit coupling are constrained by limited material choices and short spin-coherence lengths.…

Sensors and actuators based on resonant micro-electro-mechanical systems (MEMS), such as scanning micro mirrors, are well-established in automotive and consumer products. As the areas of application broaden, the requirements for the MEMS…

We present a physics-based compact model for two-dimensional (2D) field-effect transistors (FETs) based on monolayer semiconductors such as MoS2. A semi-classical transport approach is appropriate for the 2D channel, enabling simplified…

A graphene field-effect-transistor (GFET) model calibrated with extracted device parameters and a commercial 65 nm silicon MOSFET model are compared with respect to their radio frequency behavior. GFETs slightly lag behind CMOS in terms of…

This work presents a novel general compact model for 7nm technology node devices like FinFETs. As an extension of previous conventional compact model that based on some less accurate elements including one-dimensional Poisson equation for…

With phenomenal growth of high speed and complex computing applications, the design of low power and high speed logic circuits have created tremendous interest. Conventional computing devices are based on irreversible logic and further…

In the past decade, semiconducting carbon nanotube thin films have been recognized as contending materials for wide-ranging applications in electronics, energy, and sensing. In particular, improvements in large-area flexible electronics…

Superconducting nanowires undergoing quantum phase-slips have potential for impact in electronic devices, with a high-accuracy quantum current standard among a possible toolbox of novel components. A key element of developing such…

The use of carbon nanotube (CNT) field-effect transistors (FETs) in microwave circuit design requires an appropriate, immediate and efficient description of their performance. This work describes a technique to extract the parameters of an…

Fully depleted (FD) Silicon on Insulator (SOI) metal oxide Field Effect Transistor (MOSFET) Is the Leading Contender for Sun 65nm Regime. This paper presents a study of effects of work functions of metal gate on the performance of FD-SOI…

In this paper, through careful calibration, we demonstrate the possibility of using a single set of models and parameters to model the ON current and Sub-threshold Slope (SS) of an nMOSFET at 300K and 5K using Technology Computer-Aided…

We demonstrate a 36$\times$36 gate electrode crossbar that supports 648 narrow-channel field effect transistors (FET) for gate-defined quantum dots, with a quadratic increase in quantum dot count upon a linear increase in control lines. The…

Power dissipation has become a major obstacle in performance scaling of modern integrated circuits, and has spurred the search for devices operating at lower voltage swing. In this letter, we study p-i-n band-to-band tunneling field effect…

As quantum technologies advance, a fundamental challenge is mitigating noise and backscattering in superconducting circuits to achieve scalable, high-fidelity operations. Conventional superconducting components lack directionality, causing…

This paper investigates the impact of technological constraints on passive elements in the design of inductively degenerated CMOS low-noise amplifiers (LNAs). A theoretical analysis is combined with circuit simulations in a 130-nm CMOS…

The Network-on-Chip (NoC) paradigm has been proposed as a favorable solution to handle the strict communication requirements between the increasingly large number of cores on a single chip. However, NoC systems are exposed to the aggressive…

Junctionless Nanowire Field-Effect Transistors (JNFETs), where the channel region is uniformly doped without the need for source-channel and drain-channel junctions or lateral doping abruptness, are considered an attractive alternative to…

We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ…

Historically, VLSI designers have focused on increasing the speed and reducing the area of digital systems. However, the evolution of portable systems and advanced Deep Sub-Micron fabrication technologies have brought power dissipation as…