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The transport properties, phase diagram, and dopant distribution are investigated in systematically Nd doped CaFe_2As_2 single crystals. Coexistence of two superconducting (SC) phases with different critical transition temperature (T_c) is…

Superconductivity · Physics 2014-11-13 Bo Gao , Xiaojiang Li , Qiucheng Ji , Gang Mu , Wei Li , Tao Hu , Ang Li , Xiaoming Xie

We experimentally investigate capacitance response of a thick ferroelectric GeTe single-crystal flake on the Si/SiO2 substrate, where p-doped Si layer serves as a gate electrode. We confirm by resistance measurements, that for…

Mesoscale and Nanoscale Physics · Physics 2022-12-16 N. N. Orlova , A. V. Timonina , N. N. Kolesnikov , E. V. Deviatov

We show that the unexpected metallic behavior (the so-called two-dimensional metal-insulator transition) observed in low-density Silicon metal-oxide-semiconductor field-effect transistors (Si-MOSFETs) is controlled by a unique…

Strongly Correlated Electrons · Physics 2015-05-13 Geneviève Fleury , Xavier Waintal

Based on a systematic analysis of the thermal evolution of the resistivities of Fe-based chalcogenides Fe$_{1+\delta }$Te$_{1-x}X_{x}$ ($X$= Se, S), it is inferred that their often observed nonmetallic resistivities are related to a…

Superconductivity · Physics 2015-05-12 M. ElMassalami , K. Deguchi , T. Machida , H. Takeya , Y. Takano

We report the transport properties of mechanically exfoliated few-layer SnSe$_{2}$ flakes, whose mobility is found with four probe measurements to be ~ 85 cm$^{2}$V$^{-1}$s$^{-1}$ at 300 K, higher than those of the majority of few-layer…

Mesoscale and Nanoscale Physics · Physics 2016-12-21 Chenglei Guo , Zhen Tian , Yanjun Xiao , Qixi Mi , Jiamin Xue

Spin excitations are one of the top candidates for mediating electron pairing in unconventional superconductors. Their coupling to superconductivity is evident in a large number of systems, by the observation of an abrupt redistribution of…

Carbon nanotube field-effect transistors (CNT FETs) have been proposed as possible building blocks for future nano-electronics. But a challenge with CNT FETs is that they appear to randomly display varying amounts of hysteresis in their…

Transition metal dichalcogenide field-effect transistors (FETs) have been actively explored for low-power electronics, light detection, and sensing. Albeit promising, their performance is strongly limited by low-frequency noise (LFN). Here,…

Mesoscale and Nanoscale Physics · Physics 2017-04-04 Isidoro Martinez , Mario Ribeiro , Pablo Andres , Luis E. Hueso , Felix Casanova , Farkhad G. Aliev

The symmetry breaking induced by the ferroelectric transition often triggers the emergence of topological electronic states such as Weyl fermions in ferroelectric-like metals/semimetals. Such strong coupling between the lattice deformation…

Materials Science · Physics 2022-04-14 Y. Okamura , H. Handa , R. Yoshimi , A. Tsukazaki , K. S. Takahashi , M. Kawasaki , Y. Tokura , Y. Takahashi

This work examines the influence of thickness on the electrical transport properties of mechanically exfoliated two-dimensional SnSe$_2$ nanosheets, derived from the bulk single crystal. Contrary to conventional trend observed in…

Mesoscale and Nanoscale Physics · Physics 2025-09-15 Aarti Lakhara , Lars Thole , Rolf J. Haug , P. A. Bhobe

We systematically studied in-plane optical conductivity of FeSe$_{1-x}$Te$_{x}$ thin films fabricated on CaF$_{2}$ substrates for $x$ = 0, 0.1, 0.2, and 0.4. This system shows a large enhancement of superconducting transition temperature…

Superconductivity · Physics 2021-08-04 M. Nakajima , K. Yanase , M. Kawai , D. Asami , T. Ishikawa , F. Nabeshima , Y. Imai , A. Maeda , S. Tajima

We propose and investigate a model for the coexistence of Superconductivity (SC) and Ferroelectricity (FE) based on the dynamical symmetries $su(2)$ for the pseudo-spin SC sector, $h(4)$ for the displaced oscillator FE sector, and $su(2)…

Superconductivity · Physics 2009-10-31 Joseph L. Birman , Meir Weger

Layered transition metal dichalcogenides (TMDCs) host a plethora of interesting physical phenomena ranging from charge order to superconductivity. By introducing magnetic ions into 2H-NbS$_2$, the material forms a family of magnetic…

In this paper, through careful calibration, we demonstrate the possibility of using a single set of models and parameters to model the ON current and Sub-threshold Slope (SS) of an nMOSFET at 300K and 5K using Technology Computer-Aided…

Computational Physics · Physics 2024-01-01 Prabjot Dhillon , Nguyen Cong Dao , Nguyen Cong Dao , Hiu Yung Wong

This brief proposes an analytical approach to model the dc electrical behavior of extremely narrow cylindrical junctionless nanowire field-effect transistor (JLNW-FET). The model includes explicit expressions, taking into account the…

Applied Physics · Physics 2021-08-18 Danial Shafizade , Majid Shalchian , Farzan Jazaeri

Structural properties, impedance, dielectric and electric modulus spectra have been used to investigate the sintering temperature (Ts) effect on the single phase cubic spinel Ni0.6Zn0.4Fe2O4 (NZFO) ceramics synthesized by standard ceramic…

Materials Science · Physics 2016-10-19 M. A. Ali , M. N. I. Khan , F. -U. -Z. Chowdhury , S. Akhter , M. M. Uddin

The ferroelectric (FE) control of electronic transport is one of the emerging technologies in oxide heterostructures. Many previous studies in FE tunnel junctions (FTJs) exploited solely the differences in the electrostatic potential across…

Density functional theory is a standard model for condensed matter theory and computational material science. The accuracy of density functional theory is limited by accuracy of the employed approximation to the exchange-correlation…

Materials Science · Physics 2018-09-19 M. Ekholm , D. Gambino , H. J. M. Jönsson , F. Tasnádi , B. Alling , I. A. Abrikosov

We show that Joule heating causes current-controlled negative differential resistance (CC-NDR) in TiO2 by constructing an analytical model of the voltage-current V(I) characteristic based on polaronic transport for Ohm's Law and Newton's…

Mesoscale and Nanoscale Physics · Physics 2015-05-30 A. S. Alexandrov , A. M. Bratkovsky , B. Bridle , S. E. Savel'ev , D. B. Strukov , R. Stanley Williams

Field-effect transistors (FETs) based on 2D materials have already reached the stage of trial FAB integration. However, reliability limitations caused by various defects present a serious obstacle for their smooth way forward, especially…

Materials Science · Physics 2025-07-18 Yezhu Lv , Haihui Cai , Yehao Wu , Yu. Yu. Illarionov