Related papers: Surface structures of graphene covered Cu (103)
We have used low-energy electron microscopy and diffraction to examine the significance of lattice orientation in graphene growth on Cu(001). Individual graphene domains undergo anisotropic growth on the Cu surface, and develop into lens…
We report on detailed microscopy studies of graphene and few-layer-graphene produced by mechanical exfoliation on various semi-conducting substrates. We demonstrate the possibility to prepare and analyze graphene on (001)-GaAs, manganese…
A simple solid-on-solid model, proposed earlier to describe overlayer-induced faceting of bcc(111) surface, is applied to faceting of spherical surfaces covered by adsorbate monolayer. Monte Carlo simulation results show that morphology of…
We use low-energy electron microscopy to investigate how graphene grows on Cu(111). Graphene islands first nucleate at substrate defects such as step bunches and impurities. A considerable fraction of these islands can be rotationally…
Herein, an effort has given to sheds light on the effects of plasma process parameters on the growth of vertical graphene nanosheets (VGNs) by plasma enhanced chemical vapor deposition (PECVD. The parameters include substrate temperature,…
The catalyst-free synthesis of graphene on dielectrics prevents the damage induced by the transfer process. Although challenging, to master this synthesis would boost the integration of graphene on consumer electronics since defects hinder…
Two experimental studies reported the spontaneous formation of amorphous and crystalline structures of C60 intercalated between graphene and a substrate. They observed interesting phenomena ranging from reaction between C60 molecules under…
Transfer of graphene, grown by Chemical Vapor Deposition (CVD), to a substrate of choice, typically involves deposition of a polymeric layer (typically, poly(methyl methacrylate, PMMA or polydimethylsiloxane, PDMS). These polymers are quite…
Physical vapor deposition of Si onto transferred graphene is investigated. At elevated temperatures, Si nucleates preferably on wrinkles and multilayer graphene islands. In some cases, however, Si can be quasi-selectively grown only on the…
We measure the concentration of carbon adatoms on the Ru(0001) surface that are in equilibrium with C atoms in the crystal's bulk by monitoring the electron reflectivity of the surface while imaging. During cooling from high temperature, C…
Chemical vapor deposition (CVD) is a widely used technique to grow solid materials with accurate control of layer thickness and composition. Under mass-transport-limited conditions, the surface of thin films thus produced grows in an…
We address the stability of the surface phases that occur on the C-side of 3C-SiC($\bar{1} \bar{1} \bar{1}$) at the onset of graphene formation. In this growth range, experimental reports reveal a coexistence of several surface phases. This…
To understand surface structural modifications for Au/Si (100) system, a thin gold film of ~2.0 nm was deposited under ultra high vacuum (UHV) condition on reconstructed Si surfaces using molecular beam epitaxy (MBE). Post annealing was…
The interaction of the strong electron-acceptor tetracyanoethylene (TCNE) with the Cu(100) surface has been studied with scanning tunneling microscopy experiments and first-principles density functional theory calculations. We compare two…
Thermal conductance of metal contacts on transferred graphene (trG) could be significantly reduced from the intrinsic value of similar contacts on as-grown graphene (grG), due to additional resistance by increased roughness, residues,…
Current methods of chemical vapor deposition (CVD) of graphene on copper are complicated by multiple processing steps and by high temperatures required in both preparing the copper and inducing subsequent film growth. Here we demonstrate a…
By limiting the carbon segregation at the copper surface defects, a pulsed chemical vapor deposition method for single layer graphene growth is shown to inhibit the formation of few-layer regions, leading to a fully single-layered graphene…
We synthesized three-dimensional nanoporous graphene films by a chemical vapor deposition method with nanoporous copper as a catalytic substrate. The resulting nanoporous graphene has the same average pore size as the underlying copper…
Epitaxial graphene layers were grown on the C-face of 4H- and 6H-SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramatically affect the morphological properties of the layers. The…
We shed light on the catalyst-free growth of graphene from amorphous carbon (a-C) by current-induced annealing by witnessing the mechanism both with in-situ transmission electron microscopy and with molecular dynamics simulations. Both in…