Related papers: Wide band gap phase change material tuned visible …
All-dielectric nanoantennas have recently opened exciting opportunities for functional nanophotonics, owing to their strong optical resonances along with low material loss in the near-infrared range. Pushing these concepts to the visible…
The development of semiconductor electronics is shortly reviewed, beginning with the development of germanium devices (band gap $E_g=0.66$ eV) after world war II. Quickly a tendency to alternative materials with wider band gap became…
A fascinating photonic platform with a small device scale, fast operating speed, as well as low energy consumption is two-dimensional (2D) materials, thanks to their in-plane crystalline structures and out-of-plane quantum confinement. The…
Phase-change materials based on Ge-Sb-Te alloys are widely used in industrial applications such as nonvolatile memories, but reaction pathways for crystalline-to-amorphous phase-change on picosecond timescales remain unknown. Femtosecond…
A 3D woodpile structure tunable plasma photonic crystal is designed, simulated, and experimentally characterized over the S - X band of the electromagnetic spectrum. The measurements confirm that the electromagnetic response is rich in…
Infrared transparent conductors have long been sought due to their broad optoelectronic applications in the infrared wavelength range. However, the search for ideal materials has been limited by the inherent trade-off between electrical…
Optical metasurfaces have enabled high-speed, low-power image processing within a compact footprint. However, reconfigurable imaging in such flat devices remains a critical challenge for fully harnessing their potential in practical…
Chalcogenide phase-change materials (PCMs) are widely applied in electronic and photonic applications, such as non-volatile memory and neuro-inspired computing. Doped Sb$_2$Te alloys are now gaining increasing attention for on-chip photonic…
Subwavelength engineering and utilizing phase-change materials with large contrast in their optical properties have become powerful design tools for integrated silicon photonics. Reversible phase-transition of phase-change materials such as…
Broadband spectrum detectors exhibit great promise in fields such as multispectral imaging and optical communications. Despite significant progress, challenges like materials instability, complex manufacturing process and high costs still…
Optically bistable materials respond to a single input with two possible optical outputs, contingent upon excitation history. Such materials would be ideal for optical switching and memory, yet limited understanding of intrinsic optical…
Epitaxial Ba0.5Sr0.5TiO3 thin films were prepared on Nb-doped SrTiO3 (100)substrates by the pulsed laser deposition technique, and were studied by measuring the Ti 2p - 3d resonant photoemission spectra in the valence-band region as a…
Actively tunable, narrowband spectral filtering across arbitrary optical wavebands is highly desirable in a plethora of applications, from chemical sensing, hyperspectral imaging to infrared astronomy. Yet, the ability to actively…
Monolithic integration of novel materials for unprecedented device functions without modifying the existing photonic component library is the key to advancing heterogeneous silicon photonic integrated circuits. To achieve this, the…
High gain photoconductive devices find wide spread applications in low intensity light detection. Ultra-thin layered materials have recently attracted a lot of attention from researchers in this regard. However, in general, a large…
Recent advances in nonlocal metasurfaces have enabled unprecedented success in shaping the wavefront of light with spectral selectivity, offering new solutions for many emerging nanophotonics applications. The ability to tune both the…
Hybrid plasmonic photonic structures combine the plasmonic response with the photonic band gap, holding promise for utilization as optical switches and sensors. Here, we demonstrate the active modulation of the optical response in such…
The embedding of tunable quantum emitters in a photonic bandgap structure enables the control of dissipative and dispersive interactions between emitters and their photonic bath. Operation in the transmission band, outside the gap, allows…
The ternary nitride CaZn2N2, composed only of earth-abundant elements, is a novel semiconductor with a band gap of 1.8 eV. First-principles calculations predict that continuous Mg substitution at the Zn site will change the optical band gap…
Implementation of an optically active material on silicon has been a persistent technological challenge. For tandem photovoltaics using a Si bottom cell, as well as for other optoelectronic applications, there has been a longstanding need…