Related papers: Defect Engineering for Modulating the Trap States …

To be practical, semiconductors need to be doped. Sometimes, to nearly degenerate levels, e.g. in applications such as thermoelectric, transparent electronics or power electronics. However, many materials with finite band gaps are not…

Superconducting atom chips have very significant advantages in realizing trapping structures for ultracold atoms compared to conventional atom chips. We extend these advantages further by developing the ability to dynamically tailor the…

Characterizing intrinsic defects is an important step in evaluating materials for new optoelectronic device applications. For photomultipliers, suppressing dark currents is critical, but there exists a tradeoff between maximizing the band…

We propose an improved structure of an optical biosensor based on a photonic crystal (PC) with a defect layer (DL), which can detect the concentration of SARS-CoV-2 in water by defect mode (DM) shift. We investigated 4 types of defective…

Defects in semiconductor crystals can have significant detrimental effects on their performance as radiation detectors. Defects cause charge trapping and recombination, leading to lower signal amplitudes and poor energy resolution. We have…

Few- and single-layer MoS2 host substantial densities of defects. They are thought to influence the doping level, the crystal structure, and the binding of electron-hole pairs. We disentangle the concomitant spectroscopic expression of all…

We studied the influence of defect states on the laser excitation process in silicon using time-dependent density functional theory. We assumed two types of point defects: interstitial oxygen and silicon vacancies. We found that the…

Two-dimensional (2D) transition metal dichalcogenide (TMD) materials have versatile electronic and optical properties. TMD nanoribbons show interesting properties due to reduced dimensionality, quantum confinement, and edge states. Tang et…

Transient microscopy is of vital importance in understanding the dynamics of optical excited states in optoelectronic materials, as it allows for a direct visualization of the movement of energy carriers in space and time. Important…

Applications like high density information storage, neuromorphic computing, nanophotonics, etc. require ultra-thin electronic devices which can be controlled with applied electric field. Of late, atomically thin two-dimensional (2D)…

Experimental evidence indicating the beneficial impact of a phosphorous diffusion gettering (PDG) in the reduction of trapping centers is shown, as observed by means of inductively coupled photoconductance (PC) decay and lifetime…

Quasiparticles represent an intrinsic source of perturbation for superconducting qubits, leading to both dissipation of the qubit energy and dephasing. Recently, it has been shown that normal-metal traps may efficiently reduce the…

The optoelectronic properties of atomically thin transition-metal dichalcogenides are strongly correlated with the presence of defects in the materials, which are not necessarily detrimental for certain applications. For instance, defects…

We investigate the limiting factors in the standard implementation of the Ca magneto-optical trap. We find that intercombination transitions from the 4s5p 1P1 state used to repump electronic population from the 3d4s 1D2 state severely…

Two-dimensional (2D) transition metal dichalcogenides (TMDs) based photodetectors have shown great potential for the next generation optoelectronics. However, most of the reported MoS2 photodetectors function under the photogating effect…

In integrated photonics, specific wavelengths are preferred such as 1550 nm due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, layered two-dimensional (2D) materials…

Structural defects are widely regarded as detrimental to the optoelectronic properties of monolayer transition metal dichalcogenides, leading to concerted efforts to eliminate defects via improved materials growth or post-growth…

Over the last few years, ReS2 has generated a myriad of unattended queries regarding its structure, the concomitant thickness dependent electronic properties and apparently contrasting experimental optical response. In this work, with…

In this paper, the transfer matrix method is used to investigate the reflectance properties in a symmetric defective annular photonic crystal (APC) containing semiconductor, high-$T_c$ superconductor and a radial defect layer. Numerical…

Bandgap control is of central importance for semiconductor technologies. The traditional means of control is to dope the lattice chemically, electrically or optically with charge carriers. Here, we demonstrate for the first time a widely…