Related papers: Two-Electron Spin Correlations in Precision Placed…
Nuclear spins show exceptionally long coherence times but the underlying good isolation from their environment is a challenge when it comes to controlling nuclear spin qubits. A particular difficulty, not only for nuclear spin qubits, is…
Pulsed electrically-detected magnetic resonance of phosphorous (31P) in bulk crystalline silicon at very high magnetic fields (B > 8.5 T) and low temperatures (T = 2.8 K) is presented. We find that the spin-dependent capture and reemission…
We apply the full power of modern electronic band structure engineering and epitaxial heterostructures to design a transistor that can sense and control a single donor electron spin. Spin resonance transistors may form the technological…
A major challenge in using spins in the solid state for quantum technologies is protecting them from sources of decoherence. This can be addressed, to varying degrees, by improving material purity or isotopic composition for example, or…
We theoretically study the Hilbert space structure of two neighbouring P donor electrons in silicon-based quantum computer architectures. To use electron spins as qubits, a crucial condition is the isolation of the electron spins from their…
Electron and nuclear spins of donor ensembles in isotopically pure silicon experience a vacuum-like environment, giving them extraordinary coherence. However, in contrast to a real vacuum, electrons in silicon occupy quantum superpositions…
Silicon is the foundation of current information technology, and a promising platform for future quantum information technology as silicon-based qubits exhibit some of the longest coherence times in solid-state. At the same time, silicon is…
So far, all experimental tests of Bell inequalities which must be satisfied by all local realistic hidden-variable theories and are violated by quantum mechanical predictions have left at least one loophole open. We propose a feasible setup…
Silicon quantum dots are considered an excellent platform for spin qubits, partly due to their weak spin-orbit interaction. However, the sharp interfaces in the heterostructures induce a small but significant spin-orbit interaction which…
Control of entanglement between qubits at distant quantum processors using a two-qubit gate is an essential function of a scalable, modular implementation of quantum computation. Among the many qubit platforms, spin qubits in silicon…
The performance of multi-electron spin qubits is examined by comparing exchange oscillations in coupled single-electron and multi-electron quantum dots in the same device. Fast (> 1 GHz) exchange oscillations with a quality factor Q > 15…
We present a controlled method for computing the exchange coupling in strongly correlated one-dimensional electron systems. It is based on the asymptotically exact relation between the exchange constant and the pair-correlation function of…
Silicon quantum dots are a leading approach for solid-state quantum bits. However, developing this technology is complicated by the multi-valley nature of silicon. Here we observe transport of individual electrons in a silicon CMOS-based…
Electron spins are amongst the most coherent solid-state systems known, however, to be used in devices for quantum sensing and information processing applications, they must be typically placed near interfaces. Understanding and mitigating…
Double quantum dots are convenient solid-state platforms to encode quantum information. Two-electron spin states can be conveniently detected and manipulated using strong quantum selection rules based on the Pauli exclusion principle,…
Significant advances have been made towards fault-tolerant operation of silicon spin qubits, with single qubit fidelities exceeding 99.9%, several demonstrations of two-qubit gates based on exchange coupling, and the achievement of coherent…
We measure singlet-triplet dephasing in a two-electron double quantum dot in the presence of an exchange interaction which can be electrically tuned from much smaller to much larger than the hyperfine energy. Saturation of dephasing and…
Spin qubits in gate-defined silicon quantum dots are receiving increased attention thanks to their potential for large-scale quantum computing. Readout of such spin qubits is done most accurately and scalably via Pauli spin blockade (PSB),…
Semiconductor spin qubits combine excellent quantum performance with the prospect of manufacturing quantum devices using industry-standard metal-oxide-semiconductor (MOS) processes. This applies also to ion-implanted donor spins, which…
Ensembles of bismuth donor spins in silicon are promising storage elements for microwave quantum memories due to their long coherence times which exceed seconds. Operating an efficient quantum memory requires achieving critical coupling…