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We demonstrate the ability to reduce the carrier concentration of thin films of the topological insulator (TI) Bi2Se3 by utilizing a novel approach, namely non-volatile electrostatic gating via corona charging of electret polymers.…
Chiral molecular systems offer unique pathways to control spin and magnetism beyond conventional symmetry operations. Here, we demonstrate that chiral ionic liquids enable electric-field modulation of two-dimensional (2D) ferromagnetism in…
Solid electrolytes are considered a potentially enabling component in rechargeable batteries that use lithium metal as the negative electrode, and thereby can safely access higher energy density than available with today's lithium ion…
The design of transparent conductive electrodes (TCEs) for optoelectronic devices requires a trade-off between high conductivity or transmittivity, limiting their efficiency. This paper demonstrates a novel approach to fabricating TCEs that…
In this work, we report on the electronic properties of solution-gated field effect transistors (SGFETs) fabricated using large-area graphene. Devices prepared both with epitaxially grown graphene on SiC as well as with chemical vapor…
We present a quantitative analysis of the steady state electronic transport in a resistive switching device. The device is composed of a thin film of Ag$_{2}$S (solid electrolyte) contacted by a Pt nano-contact acting as ion-blocking…
Ionic liquid (IL) gating has emerged as a powerful tool to control the structural, electronic, optical, and magnetic properties of materials by driving ion motion at solid interfaces. In magneto-ionic systems, electric fields are used to…
Doping via electrostatic gating is a powerful and widely used technique to tune the electron densities in layered materials. The microscopic details of how these setups affect the layered material are, however, subtle and call for careful…
Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in…
We performed radiofrequency (RF) reflectometry measurements at 2.4 GHz on electrolyte-gated graphene field-effect transistors (GFETs) utilizing a tunable stub-matching circuit for impedance matching. We demonstrate that the gate voltage…
Our goal is to electronically regulate electrochemical cells. For this, we introduced a third element, called the gate, which was placed between the cathode and the anode electrodes of the cell. Voltage applied to this element controlled…
In Bi$_2$Te$_2$Se, the period of quantum oscillations arising from surface Dirac fermions can be increased 6-fold using ionic liquid gating. At large gate voltages, the Fermi energy reaches the $N$ = 1 Landau level in a 14-Tesla field. This…
It is thought that strong electron correlation in an insulating parent phase would enhance a critical temperature (Tc) of superconductivity in a doped phase via enhancement of the binding energy of a Cooper pair as known in high-Tc…
We employ noise spectroscopy and transconductance measurements to establish the optimal regimes of operation for our fabricated silicon nanowire field-effect transistors (Si NW FETs) sensors. A strong coupling between the liquid gate and…
Independent control of carrier density and out-of-plane displacement field is essential for accessing novel phenomena in two-dimensional material heterostructures. While this is achieved with independent top and bottom metallic gate…
Two-dimensional (2D) materials are highly promising for tunnel field effect transistors (TFETs) with low subthreshold swing and high drive current because the shorter tunnel distance and strong gate controllability can be expected from the…
The field-effect technique, popular thanks to its application in common field-effect transistors, is here applied to metallic thin films by using as a dielectric a novel polymer electrolyte solution. The maximum injected surface charge,…
Manipulating the electrostatic double layer and tuning the conductance in nanofluidic systems at salt concentrations of 100 mM or higher has been a persistent challenge. The primary reasons are (i) the short electrostatic proximity length,…
Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is shown here that the transistors exhibit two…
In a family of experiments carried on all-metallic supercurrent nano-transistors a surprising gating effect has been recently shown. These include the full suppression of the critical supercurrent, the increase of quasiparticle population,…