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The deposition of a thin oxide layer at metal/semiconductor interfaces has been previously reported as a means of reducing contact resistance in 2D electronics. Using X-ray photoelectron spectroscopy with in-situ Ti deposition, we fabricate…

Materials Science · Physics 2019-10-10 Keren M. Freedy , David H. Olson , Patrick E. Hopkins , Stephen J. McDonnell

The electrical properties of thin TiO2 films have recently been extensively exploited towards enabling a variety for metal-oxide electron devices: unipolar/bipolar semiconductor devices and/or memristors. In such efforts, investigations on…

Applied Physics · Physics 2017-12-13 L. Michalas , A. Khiat , S. Stathopoulos , T. Prodromakis

We study the chemical nature of the bonding of an oxide layer to the parent metal. In order to disentangle chemical effects from strain/misfit, Ti(10$\bar{1}$0)/TiO$_{2}$(100) interface has been chosen. We use the density functional…

Materials Science · Physics 2012-12-10 Linggang Zhu , Graeme J. Ackland

The size of the band gap and the energy position of the band edges make several oxynitride semiconductors promising candidates for efficient hydrogen and oxygen production under solar light illumination. The intense research efforts…

Organic/inorganic hybrid systems offer great potential for novel solar cell design combining the tunability of organic chromophore absorption properties with high charge carrier mobilities of inorganic semiconductors. However, often such…

Black TiO2 nanoparticles with a crystalline-core and amorphous-shell structure exhibit superior optoelectronic properties in comparison with pristine TiO2. The fundamental mechanisms underlying these enhancements, however, remain unclear,…

We propose a systematic approach to obtain various forms of insulating titanium oxynitrides Ti$_{n}$N$_{2}$O$_{2n-3}$ and we conduct a detailed study on its $n=2$ case, Ti$_{2}$N$_{2}$O. We study the energetics and the electronic structures…

Materials Science · Physics 2019-03-06 Yuta Aoki , Sinisa Coh , Steven G. Louie , Marvin L. Cohen , Susumu Saito

This study aims towards a systematic reciprocity of the tunable synthesis parameters - partial pressure of N$_2$ gas, ion energy (\Ei) and Ti interface in TiN thin film samples deposited using ion beam sputtering at ambient temperature…

Materials Science · Physics 2020-06-22 Susmita Chowdhury , Rachana Gupta , Shashi Prakash , Layanta Behera , D. M. Phase , Mukul Gupta

The oxide-metal-oxide architecture is a promising approach for the development of the high-performance indium-free transparent electrode (TE), which is a key component of various optoelectronic applications such as solar cells, organic…

Applied Physics · Physics 2024-01-26 Nikky Chandrakar

For the clear understanding of the role of interface reaction between top metal electrode and titanium oxide layer, we investigated the effects of various top metals on the resistive switching in Metal/a-TiO2/Al devices. The top Al device…

Materials Science · Physics 2010-07-16 Hu Young Jeong , Jeong Yong Lee , Sung-Yool Choi

AmorphousGd2O3 and Sc2O3 thin films were deposited on Si by high-pressure sputtering (HPS). In order to reduce the uncontrolled interfacial SiOx growth, firstly a metallic film of Gd or Sc was sputtered in pure Ar plasma. Subsequently, they…

Two-dimensional transition metal dichalcogenides (TMDCs) are promising materials for next-generation optoelectronic devices, yet their implementation is hindered by limited sample stability and challenges in forming reliable electrical…

Cu$_2$O has appealing properties as an electrode for photo-electrochemical water splitting, yet its practical performance is severely limited by inefficient charge extraction at the interface. Using hybrid DFT calculations, we investigate…

Materials Science · Physics 2021-03-09 Chiara Ricca , Lisa Grad , Matthias Hengsberger , Jürg Osterwalder , Ulrich Aschauer

We have successfully demonstrated Si/GaAs p-n heterostructures using Al2O3 ultra-thin oxide interfacial layers. The band diagram and band offsets were investigated using X-ray photoelectron spectroscopy and confirm a small discontinuity in…

Among the wide bandgap semiconductors, TiO$_{2}$ is the highly stable and cost-efficient semiconductor used for the different photocatalysis processes like water splitting, chemical waste degradation, anti-micro bacterial activities, and…

Materials Science · Physics 2022-07-27 Manish K Vishwakarma , Manjeet , Puneet Jain

In this study, we explore the heterointerface of MgB$_2$ film on SiC substrate at atomic scale using electron microscopy and spectroscopy. We detect ~1 nm MgO between MgB$_2$ and SiC. Atomic-level electron energy loss spectra (EELS) show…

Superconductivity · Physics 2023-10-02 Xiaowen Zhang , Tiequan Xu , Ruochen Shi , Bo Han , Fachen Liu , Zhetong Liu , Xiaoyue Gao , Jinlong Du , Yue Wang , Peng Gao

The structural interface properties of layered Pt/Ti/SiO2/Si electrodes have been investigated using high-resolution specular and diffuse x-ray reflectivity under grazing angles. Currently this multilayer system represents a technological…

Materials Science · Physics 2007-05-23 M. Aspelmeyer , U. Klemradt , W. Hartner , H. Bachhofer , G. Schindler

Thin-film solar cells reach high efficiencies and have a low carbon footprint in production. Tandem solar cells have the potential to significantly increase the efficiency of this technology, where the bottom-cell is generally composed of a…

Applied Physics · Physics 2025-12-01 Thomas Paul Weiss , Mohit Sood , Aline Vanderhaegen , Susanne Siebentritt

The (secondary) electron emission from multilayered Al$_2$O$_3$/TiN membranes has been investigated with a hemispherical collector system in a scanning electron microscope for electrons with energies between 0.3 and 10 keV. These ultra-thin…

Instrumentation and Detectors · Physics 2021-08-11 H. W. Chan , V. Prodanović , A. M. M. G. Theulings , C. W. Hagen , P. M. Sarro , H. v. d Graaf

A number of electronic devices involve metal/oxide interfaces in their structure where the oxide layer plays the role of electrical insulator. As the downscaling of devices continues, the oxide thickness can spread over only a few atomic…

Materials Science · Physics 2017-04-26 Eric Tea , Jianqiu Huang , Guanchen Li , Celine Hin
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