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It is well established that some kinds of lattice deformations in graphene monolayer, which change electron hopping in sublattice and affect in-plane motion of electrons, may induce out-of-plane pseudo-magnetic fields as large as 100 T.…
We consider electron tunneling from a nonmagnetic $n$-type semiconductor ($n$-S) into a ferromagnet (FM) through a very thin forward-biased Schottky barrier resulting in efficient extraction of electron spin from a thin $n$-S layer near…
Via the spin-Hall effect and its inverse, in-plane charge currents in a normal metal$-$ferromagnet (N$|$F) bilayer can be used to excite and detect magnetization dynamics in F. Using a magneto-electric circuit approach, we here consider the…
We report electrical measurements of the current-induced spin polarization of the surface current in topological insulator devices where contributions from bulk and surface conduction can be disen- tangled by electrical gating. The devices…
Owing to their integer spin, exciton-polaritons in microcavities can be used for observation of non-equilibrium Bose-Einstein condensation in solid state. However, spin-related phenomena of such condensates are difficult to explore due to…
We examine the magnetic properties of the localized states induced by lattice vacancies in bilayer graphene with an unrestricted Hartree-Fock calculation. We show that with realistic values of the parameters and for experimentally…
Spontaneous spin polarization of the electrical current flowing through nonmagnetic semiconductor junctions can be generated by carrier scattering processes that are independent of the carrier spin. The two required elements for…
Application of a displacement field opens a gap and enhances the Van-Hove singularities in the band structure of Bernal-stacked bilayer graphene. By adjusting the carrier density so that the Fermi energy lies in the vicinity of these…
The study of interacting topological bands with a tunable bandwidth offers a unique platform to study the interplay of intertwined orders and emergent non-electronic excitations. Here we design a time-reversal symmetric and…
We demonstrate microwave manipulation of the spin states of electrically injected spin-polarized electrons in silicon. Although the silicon channel is bounded by ferromagnetic metal films, we show that moderate microwave power can be…
Spin field-effect transistors (SFETs) are promising candidates for low-power spin-based electronics, yet existing realizations that rely on spin-orbit coupling are constrained by limited material choices and short spin-coherence lengths.…
We systematically discuss candidate wave functions for the ground state of the bilayer \nu = 1 as the distance between the layers is varied. Those that describe increased intralayer correlations at finite distance show a departure from the…
We study a bilayer structure consisting of an antiferromagnetic insulator and a normal metal. An electron current is driven in the normal metal with direction parallel to the interface between the materials. Due to interfacial exchange…
A longitudinal electric field is used to control the transit time (through an undoped silicon vertical channel) of spin-polarized electrons precessing in a perpendicular magnetic field. Since an applied voltage determines the final spin…
At B3LYP level of theory, we predict that the half-metallicity in zigzag edge graphene nanoribbon (ZGNR) can be realized when an external electric field is applied across the ribbon. The critical electric field to induce the…
We show nonlinear transport experiments on clean, suspended bilayer graphene that reveal a gap in the density of states. Looking at the evolution of the gap in magnetic fields of different orientation, we find that the groundstate is a…
Silicene is a buckled monolayer of silicon. Its electronic properties are distinct from both the conventional two dimensional electron gas and the famous graphene due to strong spin orbit interaction and the buckled structure. Silicene has…
During the past 15 years a new field has emerged, which combines superconductivity and spintronics, with the goal to pave a way for new types of devices for applications combining the virtues of both by offering the possibility of…
Altermagnetism is a subclass of antiferromagnetism that features spin-polarized electron bands of a non-relativistic origin despite the absence of a net magnetiation in the material. We here theoretically study spin pumping from an…
We investigate theoretically the electronic structure of graphene and boron nitride (BN) lateral heterostructures, which were fabricated in recent experiments. The first-principles density functional calculation demonstrates that a huge…