Related papers: Fully Spin-Polarized Current in Gated Bilayer Sili…
Electrical manipulation of spin-polarized current is highly desirable yet tremendously challenging in developing ultracompact spintronic device technology. Here we propose a scheme to realize the all-electrical manipulation of…
Silicene is a one-atom-thick 2D crystal of silicon with a hexagonal lattice structure that is related to that of graphene but with atomic bonds that are buckled rather than flat. This buckling confers advantages on silicene over graphene,…
The occurrence of a finite mismatch between the up and down spin energy channels due to the application of an electric field, leading to the generation of a polarized spin current from an unpolarized beam in antiferromagnetic materials, has…
It is shown that, for appropriate values of electron energy, the silicene dot can work as a controllable spin polarizer. The spin polarizer can polarize the spin of transmitted electrons from nearly pure down to nearly pure up by changing…
We show that a bilayer graphene flake deposited above a ferromagnetic insulator can behave as a spin-filtering device. The ferromagnetic material induces exchange splitting in the graphene flake, and due to the Fano antiresonances occurring…
We study intrinsic DC spin and valley Hall conductivity in doped ferromagnetic silicene in the presence of an electric filed applied perpendicular to silicene sheet. By calculating its energy spectrum and wavefunction and by making use of…
A mechanism to generate a spin-polarized current in a two-terminal zigzag silicene nanoribbon is predicted. As a weak local exchange field that is parallel to the surface of silicene is applied on one of edges of the silicene nanoribbon, a…
We propose a device concept, based on monolayer stanene, able to provide highly polarized spin currents (up to a $98\%$) with voltage-controlled spin polarization operating at room temperature and with small operating voltage ($0.3$ V). The…
We simulate the electron transport in vertical bi-layer nanowire which can be fabricated in molecular beam epitaxy process with lateral confinement potential formed by means of cleaved overgrowth or surface oxidization methods giving…
We study spin dependent transport through a magnetic bilayer graphene nanojunction configured as two dimensional normal/ferromagnetic/normal structure where the gate-voltage is applied on the layers of ferromagnetic graphene. Based on the…
The role of staggered potential on light-induced spin and pseudo-spin polarization has been investigated in silicene. It has been shown that non-equilibrium spin and pseudo-spin polarizations are emerged in silicene sheet by applying an…
Fully-compensated ferrimagnets exhibit zero net magnetic moment yet display non-relativistic global spin splitting, making them highly advantageous for constructing high-performance spintronic devices. The general strategy is to break the…
We propose a spin-dependent resonant tunneling structure to efficiently inject spin-polarized current into silicon (Si). By means of a heavily doped polycrystalline Si (Poly-Si) between the ferromagnetic metal (FM) and Si to reduce the…
The application of a perpendicular electric field can drive silicene into a gapless state, characterized by two nearly fully spin-polarized Dirac cones owing to both relatively large spin-orbital interactions and inversion symmetry…
Electron fully spin-polarized edge states in graphene emerged at the interfaces of a nonuniform magnetic field are studied numerically in a tight-binding model, with both the orbital and Zeeman-splitting effects of magnetic field…
We propose a model of spin-polarized-current state for electrons in bilayer graphene. The model resolves the puzzles as revealed by experiments that (a) the energy gap $E_{\rm gap}$ of the insulating ground state at the charge neutrality…
Rhombohedral stacked multilayer graphene displays the occurrence of a magnetic surface state at low temperatures. Recent angular resolved photoemission experiments demonstrate the robustness of the magnetic state in long sequences of ABC…
Spin current generation through non-relativistic spin splittings, found in uncompensated magnets and d-wave altermagnets, is desirable for low-power spintronics. Such spin currents, however, are symmetry forbidden in conventional collinear…
We show that spin polarization of electron density in nonmagnetic degenerate semiconductors can achieve 100%. This effect is realized in ferromagnet-semiconductor $FM-n^{+}$-$n$ junctions even at moderate spin selectivity of the $FM-n^{+}$…
Antiferromagnets offer an attractive platform for spintronics due to their absence of net magnetization and ultrafast spin dynamics, yet their intrinsically spin-compensated electronic structure has traditionally limited their active role…