Related papers: An orbitally derived single-atom magnetic memory

Single molecular magnets (SMMs) and Metal-Organic Frameworks (MOFs) attract significant interest due to their potential in quantum information processing, scalable quantum computing, and extended lifetimes and coherence times. The limiting…

A cluster composed of a few magnetic atoms assembled on the surface of a nonmagnetic substrate is one suitable realization of a bit for future concepts of spin-based information technology. The prevalent approach to achieve magnetic…

Quantum memories with long storage times are key elements in long-distance quantum networks. The atomic frequency comb (AFC) memory in particular has shown great promise to fulfill this role, having demonstrated multimode capacity and…

The properties of quantum systems interacting with their environment, commonly called open quantum systems, can be strongly affected by this interaction. While this can lead to unwanted consequences, such as causing decoherence in qubits…

The realization of electron-spin resonance at the single-atom level using scanning tunneling microscopy has opened new avenues for coherent quantum sensing and quantum state manipulation at the ultimate size limit. This allows to build…

More-versatile memory is strongly desired for end-users to protect their information in the information era. In particular, bit-level switchable memory, from rewritable to read-only function, allows end-users to prevent any important data…

We report on a single photon and spin storage device based on a semiconductor quantum dot molecule. Optically excited single electron-hole pairs are trapped within the molecule and their recombination rate is electrically controlled over…

We propose a new type of magnetoelectric memory device that stores magnetic easy-axis information or pseudo-magnetization, rather than a definite magnetization direction, in piezoelectric/ferromagnetic (PE/FM) heterostructures.…

Recent experiments demonstrating atomic quantum memory for light [B. Julsgaard et al., Nature 432, 482 (2004)] involve two macroscopic samples of atoms, each with opposite spin polarization. It is shown here that a single atomic cell is…

In this work, we consider a type of magnetic memory where information is encoded into the mutual arrangements of magnets. The device is an active ring circuit comprising magnetic and electronic parts connected in series. The electric part…

An annular magnetic memory that uses a spin-polarized current to switch the magnetization direction or helicity of a magnetic region is proposed. The device has magnetic materials in the shape of a ring (1 to 5 nm in thickness, 20 to 250 nm…

The faithful storage of a quantum bit of light is essential for long-distance quantum communication, quantum networking and distributed quantum computing. The required optical quantum memory must, first, be able to receive and recreate the…

The reversible control of a single spin of an atom or a molecule is of great interest in Kondo physics and a potential application in spin based electronics.Here we demonstrate that the Kondo resonance of manganese phthalocyanine molecules…

Single-molecule magnets weakly coupled to two ferromagnetic leads act as memory devices in electronic circuits---their response depends on history, not just on the instantaneous applied voltage. We show that magnetic anisotropy introduces a…

A many body Hamiltonian comprising pairing, quadrupole-quadrupole and spin-spin interaction is treated within a projected spherical basis with the aim of describing the detailed structure of the magnetic states of orbital and spin-flip…

We demonstrate active control of inhomogeneous dephasing and rephasing for single collective atomic spin excitations (spin-waves) created by spontaneous Raman scattering in a quantum memory based on cold $^{87}$Rb atoms. The control is…

We report the first experimental realization of single-qubit manipulation for single spinwaves stored in an atomic ensemble quantum memory. In order to have high-fidelity gate operations, we make use of stimulated Raman transition and…

It has been known that spin-dependent capacitances usually coexist with geometric capacitances in a magnetic multilayer. However, the charge and energy storage of the capacitance due to spin accumulation has not been fully understood. Here,…

Spin-based electronics or spintronics relies on the ability to store, transport and manipulate electron spin polarization with great precision. In its ultimate limit, information is stored in the spin state of a single electron, at which…

The rapid development of artificial intelligence (AI), Internet of Things (IoT), and edge computing applications has posed severe challenges to conventional memory technologies in terms of density, speed, and energy consumption. Herein, a…