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Resistive switching is the fundamental process that triggers the sudden change of the electrical properties in solid-state devices under the action of intense electric fields. Despite its relevance for information processing, ultrafast…
Memory devices based on resistive switching (RS) have not been fully realised due to lack of understanding of the underlying switching mechanisms. Nature of ion transport responsible for switching and growth of conducting filament in…
Resistive-switching memories are alternative to Si-based ones, which face scaling and high power consumption issues. Tetrahedral amorphous carbon (ta-C) shows reversible, non-volatile resistive switching. Here we report polarity independent…
Resistive switching in thin films has been widely studied in a broad range of materials. Yet the mechanisms behind electroresistive switching have been persistently difficult to decipher and control, in part due to their non-equilibrium…
Reversible bipolar nano-switches that can be set and read electronically in a solid-state two-terminal device are very promising for applications. We have performed molecular-dynamics simulations that mimic systems with oxygen vacancies…
Vertical structures of SiO$_{2}$ sandwiched between a top tungsten electrode and conducting non-metal substrate were fabricated by dry and wet etching methods. Both structures exhibit similar voltage-controlled memory behaviors, in which…
Martensitic and magnetic properties of ferromagnetic shape memory alloys are known to depend up on structural modulations and associated changes in the Fermi surface. These modulations although periodic and spanning over multiple unit…
Non-volatile resistive switching is demonstrated in memristors with nanocrystalline molybdenum disulfide (MoS$_2$) as the active material. The vertical heterostructures consist of silicon, vertically aligned MoS$_2$ and chrome / gold metal…
Exotic features of a metal/oxide/metal (MOM) sandwich, which will be the basis for a drastically innovative nonvolatile memory device, is brought to light from a physical point of view. Here the insulator is one of the ubiquitous and…
The shape recovery ability of shape-memory alloys vanishes below a critical size (~50nm), which prevents their practical applications at the nanoscale. In contrast, ferroic materials, even when scaled down to dimensions of a few nanometers,…
We report on resistive switching (RS) characteristics of W/WO3-x/Pt-based thin film memristors modulated by precisely controlled oxygen non-stoichiometry. RS properties of the devices with varied oxygen vacancy (VO) concentration have been…
2D materials hold transformative promise for next-generation nanoelectronics. However, successfully integrating these materials from laboratory-scale discoveries into real-world devices depends on precisely controlling their properties,…
X-ray absorption spectroscopy was used to study the microscopic origin of conductance and resistive switching in chromium doped strontium titanate (Cr:SrTiO3). Differences in the x-ray absorption near edge spectroscopy (XANES) at the Cr…
Enhancing the switching speed of oxide-based memristive devices at a low voltage level is crucial for their use as non-volatile memory and their integration into emerging computing paradigms such as neuromorphic computing. Efforts to…
Non-volatile memory devices have received a lot of interest in both industry and academia in the last decade. Transition metal oxide-based memories offer potential applications as universal memory and artificial synapses. Here we focus on…
The memristive device is one of the basic elements of novel, brain-inspired, fast, and energy-efficient information processing systems in which there is no separation between memorization and information analysis functions. Since the first…
Aside from recent advances in artificial intelligence (AI) models, specialized AI hardware is crucial to address large volumes of unstructured and dynamic data. Hardware-based AI, built on conventional complementary metal-oxidesemiconductor…
High-performance non-volatile resistive random access memories (ReRAM) and their small stimuli control are of immense interest for high-speed computation and big-data processing in the emergent Internet of Things (IOT) arena. Here, we…
Electrical switching and rectifying properties of the metal-VO2-Si structures, on both p-type and n-type silicon, with vanadium dioxide films obtained by an acetylacetonate sol-gel method, are studied. The switching effect is shown to be…
Interface-type resistive switching (RS) devices with lower operation current and more reliable switching repeatability exhibits great potential in the applications for data storage devices and ultra-low-energy computing. However, the…