Related papers: Resonance fluorescence from an atomic-quantum-memo…
We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots (density <0.01 um^(-2) capped by a 95 nm GaAs layer, and emitting around 950 nm. By combining optical…
Non-classical photon sources made of semiconductor quantum dots (QDs) emitting in the telecommunication C-band are crucial components for low-loss, long-distance photonic quantum communication networks. Here we designed and fabricated…
Quantum memories matched to single photon sources will form an important cornerstone of future quantum network technology. We demonstrate such a memory in warm Rb vapor with on-demand storage and retrieval, based on electromagnetically…
Self-assembled, epitaxially-grown InAs/GaAs quantum dots are promising semiconductor quantum emitters that can be integrated on a chip for a variety of photonic quantum information science applications. However, self-assembled growth…
The development of scalable sources of non-classical light is fundamental to unlock the technological potential of quantum photonics\cite{Kimble:Nat2008}. Among the systems under investigation, semiconductor quantum dots are currently…
The integration of coherent quantum emitters with silicon photonic platforms essential for scalable quantum technologies. We demonstrate electrically controlled self-assembled quantum dots embedded in GaAs waveguides bonded onto a SiO2/Si…
We present a novel type of single photon source in solid state, based on the coherent laser light scattering by a single InAs quantum dot. We demonstrate that the coherence of the emitted single photons is tailored by the resonant…
We present experiments in which self-assembled InAs quantum dots are coupled to a thin, suspended-beam GaAs resonator. The quantum dots are driven resonantly and the resonance fluorescence is detected. The narrow quantum-dot linewidths,…
Single photon sources based on semiconductor quantum dots offer distinct advantages for quantum information, including a scalable solid-state platform, ultrabrightness, and interconnectivity with matter qubits. A key prerequisite for their…
Single-photon sources based on semiconductor quantum dots have emerged as an excellent platform for high efficiency quantum light generation. However, scalability remains a challenge since quantum dots generally present inhomogeneous…
Time-resolved microphotoluminescence study is presented for quantum dots which are formed in the InAs/GaAs wetting layer. These dots are due to fluctuations of In composition in the wetting layer. They show spectrally sharp luminescence…
We report on the growth and optical characterisation of droplet GaAs quantum dots with extremely-thin (11 nm) capping layers. To achieve such result, an internal thermal heating step is introduced during the growth and its role in the…
In the present work, the effect of resonant pumping schemes in improving the photon coherence is investigated on InAs/InGaAs/GaAs quantum dots emitting in the telecom C-band. The linewidths of transitions of multiple exemplary quantum dots…
We report on a fast, bandwidth-tunable single-photon source based on an epitaxial GaAs quantum dot. Exploiting spontaneous spin-flip Raman transitions, single photons at $780\,$nm are generated on-demand with tailored temporal profiles of…
GaAs quantum dots grown by droplet etching epitaxy are high-quality solid-state sources of quantum light. Despite implementation in devices that exploit quantum phenomenon, a comprehensive review on the crystal growth of quantum dots grown…
We demonstrate a quantum dot single photon source at 900 nm triggered at 300 MHz by a continuous wave telecommunications wavelength laser followed by an electro-optic modulator. The quantum dot is excited by on-chip-generated second…
We report on photoluminescence measurements of vertically stacked InAs/GaAs quantum dots grown by molecular-beam epitaxy on focused ion beam patterned hole arrays with varying array spacing. Quantum dot emission at 1.24 eV was observed only…
We report on resonance fluorescence from a single quantum dot emitting at telecom wavelengths. We perform high-resolution spectroscopy and observe the Mollow triplet in the Rabi regime--a hallmark of resonance fluorescence. The measured…
We present the direct heteroepitaxial growth of high-quality InGaAs quantum dots on silicon, enabling scalable, cost-effective quantum photonics devices compatible with CMOS technology. GaAs heterostructures are grown on silicon via a GaP…
We report a joint experimental and theoretical study of the interference properties of a single photon source based on a In(Ga)As quantum dot embedded in a quasi-planar GaAs-microcavity. Using resonant laser excitation with a pulse…