Related papers: Performance of quantum-dot-based tunnel-injection …
A quantum interference effect is discussed for subgap tunneling over a distance comparable to the coherence length, which is a consequence of ``advanced-advanced'' and ``retarded-retarded'' transmission modes [Altland and Zirnbauer, Phys.…
We demonstrate how the presence of gain-loss contrast between two coupled identical resonators can be used as a new degree of freedom to enhance the modulation frequency response of laser diodes. An electrically pumped microring laser…
Operation of semiconductor lasers in the 20--50 $\mu$m wavelength range is hindered by strong non-radiative recombination in the interband laser diodes, and strong lattice absorption in GaAs-based quantum cascade structures. Here, we…
In this work, control over the precise state emitted by quantum cascade laser frequency combs through strong radio-frequency current modulation close to their repetition frequency is demonstrated. In particular, broadening of the spectrum…
We have introduced a controllable nano-scale incursion into a potential barrier imposed across a two-dimensional electron gas, and report on the phenomena that we observe as the incursion develops. In the quantum Hall regime, the…
Single-mode semiconductor lasers subject to optical injection have been shown to trigger a wide range of dynamical behavior from injection locking to chaos. Multi-wavelength lasers add even more degrees of freedom and complexity to the…
Robust laser delivery and stabilization are key components in atom-based quantum technologies, such as quantum computing. Moving these technologies towards product-like deployment requires scalable, compact, cost-effective, and upgradable…
We perform a first-principles calculation of the quantum-limited laser linewidth, testing the predictions of recently developed theories of the laser linewidth based on fluctuations about the known steady-state laser solutions against…
Blue light-emitting diodes (LEDs) consisting of a buried n+-p+ GaN tunnel junction, (In,Ga)N multiple quantum wells (MQWs) and a n+-GaN top layer are grown on single-crystal Ga-polar n+-GaN bulk wafers by plasma-assisted molecular beam…
Tunneling of a particle through a potential barrier remains one of the most remarkable quantum phenomena. Owing to advances in laser technology, electric fields comparable to those electrons experience in atoms are readily generated and…
: n-type Ge/SiGe asymmetric-coupled quantum wells represent the building block of a variety of nanoscale quantum devices, including recently proposed designs for a silicon-based THz quantum cascade laser. In this paper, we combine…
We present an experimental study of the turn-on delay in pulsed mid-infrared quantum cascade lasers. We report the unexpectedly long delay time depending on the pumping current, which does not agree with conventional theoretical predictions…
We theoretically investigate the spectrum of the fluorescence from triple quantum-dot molecules and demonstrate that it is possible to use tunneling to induce dark states. Unlike the atomic system, in quantum-dot molecules we can use…
Electron-hole excitation theory is used to unveil the role of nuclear quantum effects on the X-ray absorption spectral signatures of water, whose structure is computed via path-integral molecular dynamics with the MB-pol intermolecular…
We report on magnetoconductance measurements through a weakly coupled quantum dot, containing roughly 900 electrons, in a wide magnetic field range from 0 T to 12 T. We find modulations of the conductance resonances in the quantum Hall…
We demonstrate theoretically that the shot noise produced by a tunnel barrier in a two-channel conductor violates a Bell inequality. The non-locality is shown to originate from entangled electron-hole pairs created by tunneling events --…
The linewidth of an atom laser can be limited by excitation of higher energy modes in the source Bose-Einstein condensate, energy shifts in that condensate due to the atomic interactions, or phase diffusion of the lasing mode due to those…
Using self-consistent quantum transport simulation on realistic devices, we show that InAs band-to-band Tunneling Field Effect Transistors (TFET) with a heavily doped pocket in the gate-source overlap region can offer larger ON current and…
The output spectrum of both gas and semiconductor lasers usually contains more than one frequency. Multimode operation in gas versus semiconductor lasers arises from different physics. In gas lasers, slow equilibration of the electron…
Scanning tunneling electroluminescence microscopy is performed on a 3-nm-thick InGaN/GaN quantum well with x = 0.23 such that the main light emission occurs in the green. The technique is used to map the local recombination properties at a…