Related papers: A simple test for ideal memristors
Recently, in addition to the well-known resistor, capacitor and inductor, a fourth passive circuit element, named memristor, has been identified following theoretical predictions. The model example used in such case consisted in a nanoscale…
Resistance switching devices are of special importance because of their application in resistive memories (RRAM) which are promising candidates for replacing current nonvolatile memories and realize storage class memories. These devices…
Monolithic three-dimensional integration of memory and logic circuits could dramatically improve performance and energy efficiency of computing systems. Some conventional and emerging memories are suitable for vertical integration,…
The width of the electrodes is not included in the current phenomenological models of memristance, but is included in the memory-conservation (mem-con) theory of memristance. An experimental study of the effect of changing the top electrode…
The linear (proportional to local vacancy concentration) term in specific resistance of the material does not directly contribute to the change of memristor's total resistance when the vacancies are redistributed inside while keeping their…
A linear unsaturating magnetoresistance at high perpendicular magnetic fields, together with a quadratic positive magnetoresistance at low fields, has been seen in many different experimental materials, ranging from silver chalcogenides and…
CMOS-transistors circuits have been used as a conventional approach for designing an analog multiplier in modern era of industrial electronics. However, previous studies have shown, that based on the working region of transistors, such as…
A memristor, a two-terminal nanodevice, has garnered substantial attention in recent years due to its distinctive properties and versatile applications. These nanoscale components, characterized by their simplicity of manufacture,…
We report the fabrication and properties of a polymeric memristor, i.e. an electronic element with memory of its previous history. We show how this element can be viewed as a functional analog of a synaptic junction and how it can be used…
Crossbar arrays of resistive memories (RRAM) hold the promise of enabling In-Memory Computing (IMC), but essential challenges due to the impact of device imperfection and device endurance have yet to be overcome. In this work, we…
In recent years, a considerable research effort has shown the energy benefits of implementing neural networks with memristors or other emerging memory technologies. However, for extreme-edge applications with high uncertainty, access to…
In recent times, neural networks have been gaining increasing importance in fields such as pattern recognition and computer vision. However, their usage entails significant energy and hardware costs, limiting the domains in which this…
In this theoretical study, we focus on the high-frequency response of the electrothermal NbO2-Mott threshold switch, a real-world electronic device, which has been proved to be relevant in several applications and is classified as a…
We present a computationally inexpensive yet accurate phenomenological model of memristive behavior in titanium dioxide devices by fitting experimental data. By design, the model predicts most accurately I-V relation at small non-disturbing…
Memristors are among the most promising elements for modern microelectronics, having unique properties such as quasi-continuous change of conductance and long-term storage of resistive states. However, identifying the physical mechanisms of…
Memristor crossbar arrays are used in a wide range of in-memory and neuromorphic computing applications. However, memristor devices suffer from non-idealities that result in the variability of conductive states, making programming them to a…
In this paper, we briefly review the concept of memory circuit elements, namely memristors, memcapacitors and meminductors, and then discuss some applications by focusing mainly on the first class. We present several examples, their…
We survey the current state of phase change memory (PCM), a non-volatile solid-state memory technology built around the large electrical contrast between the highly-resistive amorphous and highly-conductive crystalline states in so-called…
This study investigates 7-methylquinolinium halobismuthates (I, Br, and Cl) in two aspects: (1) their structural and semiconducting properties influenced by anionic composition, and (2) their memristive and plasticity characteristics for…
It is shown that spin valves under suitable symmetry conditions exhibit an ON-OFF response to a spin battery, and are therefore perfect spin transistors. While a spin valve driven by a charge battery displays the usual GMR (Giant…