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Black phosphorus (BP) tunneling transistors (TFETs) using heterojunction (He) are investigated by atomistic quantum transport simulations. It is observed that edge states have a great impact on transport characteristics of BP He-TFETs,…

Mesoscale and Nanoscale Physics · Physics 2019-09-04 Fei Liu , Jian Wang , Hong Guo

We have measured, in real time, individual quasiparticle tunneling in a single Cooper pair transistor, using rf reflectometry on the supercurrent branch. We have extracted the even-to-odd and odd-to-even transition rates directly by…

Mesoscale and Nanoscale Physics · Physics 2009-11-11 O. Naaman , J. Aumentado

The process of tunneling injection is known to improve the dynamical characteristics of quantum well and quantum dot lasers; in the latter, it also improves the temperature performance. The advantage of the tunneling injection process stems…

Semi-Empirical Tight Binding (TB) is known to be a scalable and accurate atomistic representation for electron transport for realistically extended nano-scaled semiconductor devices that might contain millions of atoms. In this paper an…

Materials Science · Physics 2015-06-18 Ganesh Hegde , Michael Povolotskyi , Tillmann Kubis , Timothy Boykin , Gerhard Klimeck

This article is a review o over theory of superconductivity, which is constructed for systems with two overlapping energy bands at the Fermi surface and with arbitrary charge carrier density.There is taken into account all possible kinds of…

Superconductivity · Physics 2007-05-23 M. E. Palistrant

Tunneling hetero-junctions (THJs) usually induce confined states at the regions close to the tunnel junction which significantly affect their transport properties. Accurate numerical modeling of such effects requires combining the…

Mesoscale and Nanoscale Physics · Physics 2017-08-02 Tarek A. Ameen , Hesameddin Ilatikhameneh , Jun Z. Huang , Michael Povolotskyi , Rajib Rahman , Gerhard Klimeck

The electronic transport properties of heavy-fermion systems were calculated based on a semiphenomenological approach to the lattice non-crossing approximation in the limit of infinite local correlations augmented by crystal-field effects.…

Strongly Correlated Electrons · Physics 2008-02-03 M. Huth , F. B. Anders

In this article we propose two novel 3D finite element models, denoted method A and B, for electron and hole Drift-Diffusion (DD) current densities. Method A is based on a primal-mixed formulation of the DD model as a function of the…

Numerical Analysis · Mathematics 2014-12-12 Aurelio Mauri , Andrea Bortolossi , Giovanni Novielli , Riccardo Sacco

We demonstrate a tunnel field effect transistor based on a lateral heterostructure patterned from an $\mathrm{LaAlO_3/SrTiO_3}$ electron gas. Charge is injected by tunneling from the $\mathrm{LaAlO_3}$/$\mathrm{SrTiO_3}$ contacts and the…

Mesoscale and Nanoscale Physics · Physics 2019-06-19 A. Müller , C. Şahin , M. Z. Minhas , M. E. Flatté , G. Schmidt

Extensive studies on thin films indicated a generic cubic current-voltage $I-V$ dependence as a salient feature of charge transport by tunneling. A quick glance at $I-V$ data for molecular junctions suggests a qualitatively similar…

Chemical Physics · Physics 2015-09-21 Ioan Baldea

We study a two-band Hubbard model using the dynamical mean-field theory combined with the exact diagonalization method. At the electron density $n=2$, a transition from a band-insulator to a correlated semimetal occurs when the on-site…

Strongly Correlated Electrons · Physics 2007-05-23 Y. Ono , K. Sano

A physics-based model for the surface potential and drain current for monolayer transition metal dichalcogenide (TMD) field-effect transistor (FET) is presented. Taking into account the 2D density-of-states of the atomic layer thick TMD and…

Mesoscale and Nanoscale Physics · Physics 2015-06-05 David Jimenez

Technological progress towards next-generation electronics critically relies on achieving faster switching with reduced energy consumption. Because device operation speeds are fundamentally constrained by the intrinsic properties of…

Strongly Correlated Electrons · Physics 2026-04-21 Youngjae Kim , Sejoong Kim , Jun-Won Rhim

Nearly all experimental observations of quasi-ballistic heat flow are interpreted using Fourier theory with modified thermal conductivity. Detailed Boltzmann transport equation (BTE) analysis, however, reveals that the quasi-ballistic…

Materials Science · Physics 2015-02-13 Bjorn Vermeersch , Amr M. S. Mohammed , Gilles Pernot , Yee Rui Koh , Ali Shakouri

We adopt a stochastic approach to study the charge transport in transistors. In this approach, the hole and electron densities are ruled by diffusion-reaction stochastic partial differential equations satisfying local detailed balance…

Statistical Mechanics · Physics 2025-06-17 Jiayin Gu

We study quantum transport in ballistic $s_\pm$-wave superconductors where coupling between the two bands is included, and apply our model to three possible probes for detecting the internal phase shift of such a pairing state: tunneling…

Superconductivity · Physics 2009-10-08 Iver Bakken Sperstad , Jacob Linder , Asle Sudbø

We report electric field-controlled modulation of the Fermi surface topology and explore its effects on the superconducting state in alternating-angle twisted quadrilayer graphene (TQG). The unique combination of flat and dispersive bands…

Phase-coherent diffusive transport through mesoscopic hybrid superconductor/normal metal tunneling structures is investigated. For a N-s-S two-barrier tunneling system with bulk S and N electrodes coupled by a mesoscopic superconducting…

Superconductivity · Physics 2009-09-25 A. V. Zaitsev , A. F. Volkov , S. W. D. Bailey , C. J. Lambert

We investigate theoretically the possibility of observing two-channel Kondo (2CK) physics in tunnel-coupled double quantum dots (TCDQDs), at both zero and finite magnetic fields; taking the two-impurity Anderson model (2AIM) as the basic…

Strongly Correlated Electrons · Physics 2011-11-03 Frederic W. Jayatilaka , Martin R. Galpin , David E. Logan

The triple heterojunction TFET has been originally proposed to resolve TFET's low ON-current challenge. The carrier transport in such devices is complicated due to the presence of quantum wells and strong scattering. Hence, the full band…