Related papers: Modeling tunnel field effect transistors - from in…
We apply the bosonization technique to the problem of tunneling in a Fermi liquid, and present a semiclassical theory of tunneling rates. To test the method, we derive and evaluate an expression for the tunneling current in the problem of…
We present radio-frequency thermometry based on a tunnel junction between a superconductor and proximitized normal metal. It allows operation in a wide range of biasing conditions. We demonstrate that the standard finite-bias quasiparticle…
Helium focused ion beam irradiation enables the fabrication of tunnel field-effect transistors based on two-dimensional electron systems (2DESs) at an oxide interface.High resolution scanning transmission electron microscopy and strain…
We apply a recent quasiparticle model for the electronic properties of metallic helimagnets to calculate the transport properties of three-dimensional systems in the helically ordered phase. We focus on the ballistic regime tau^2 T…
We provide a detailed study of the interface Trap Assisted Tunneling (TAT) mechanism in tunnel field effect transistors to show how it contributes a major leakage current path before the Band To Band Tunneling (BTBT) is initiated. With a…
We present a methodology based on quantum mechanics for assigning quantum conductivity when an ac field is applied across a variable gap between two plasmonic nanoparticles with an insulator sandwiched between them. The quantum tunneling…
A tunneling field effect transistor based on armchair graphene nanoribbons is studied using ballistic quantum transport simulation based on 3D real space nonequilibrium Green's function formalism. By introducing a pocket doping region near…
We investigate quantum tunneling of charge carriers through a periodic superlattice in twisted bilayer graphene (TBG) with rectangular potential barriers, including the presence of a defect, using a low-energy continuum model. Transmission…
Anomalous tunneling refers to the phenomenon in which the transmission coefficient through a potential barrier approaches unity as the energy of an incident particle or quasiparticle tends to zero. This counterintuitive effect has been…
We investigate theoretically the thermoelectric transport through a circuit implementation of the three-channel "charge" Kondo model quantum simulator [Z. Iftikhar et al., Science 360, 1315 (2018)]. The universal temperature scaling law of…
Spin-dependent ballistic transport through a tunnel barrier is treated within the one-dimensional nearly-free-electron model. The comparison with free electrons reveals significant effects of band gaps, in particular in the bias dependence.…
A comprehensive survey is given of the thermoballistic approach to charge carrier transport in semiconductors. This semiclassical approach bridges the gap between the drift-diffusion and ballistic ("thermionic") models of carrier transport,…
We show that random telegraph signals in metal-oxide-silicon transistors at millikelvin temperatures provide a powerful means of investigating tunneling between a two-dimensional electron gas and a single defect state. The tunneling rate…
The electrical performance of a tunnel field-effect transistor depends critically on the band offset at their semiconductor heterojunction interface. Historically, it has been difficult to experimentally determine how the electronic bands…
Tunnelling between non-centrosymmetric superconductors with significant spin-orbit splitting is studied theoretically in a two-band treatment of the problem. We find that the critical Josephson current may be modulated by changing the…
Self-heating in next-generation, high-power-density field-effect transistor limits performance and complicates fabrication. Here, we introduce NEP-FET, a machine-learned framework for device-scale heat transport simulations of field-effect…
We have studied theoretically the tunneling between two edges of Quantum Hall liquids (QHL) of different filling factors, $\nu_{0,1}=1/(2 m_{0,1}+1)$, with $m_0 \geq m_1\geq 0$, through two separate point contacts in the geometry of…
Vertical field effect transistors (VOFETs) can offer short channel architecture which can further enhance the performance at low operating voltages which makes it more viable for organic electronics applications. VOFETs can be prepared with…
On the basis of the Keldysh method of non-equilibrium systems, we develop a theory of electron tunneling in normal-metal/superconductor junctions. By using the tunneling Hamiltonian model (being appropriate for the tight-binding systems),…
In this paper, we have built a numerical p-n Si/GaAs heterojunction model using a quantum-mechanical tunneling theory with various quantum tunneling interfacial materials including two-dimensional semiconductors such as hexagonal boron…