Related papers: Cryogenic MOS Transistor Model
In a previous paper (Paper I) we developed a technique for exactly solving the linearized Boltzmann equation for the electrical and thermal transport coefficients in metals in the low-temperature limit. Here we adapt this technique to…
This letter reports a temperature-dependent limit for the subthreshold swing in MOSFETs that deviates from the Boltzmann limit at deep-cryogenic temperatures. Below a critical temperature, the derived limit saturates to a value that is…
Classical fields approximation to cold weakly interacting bosons allows for a unified treatment of condensed and uncondensed parts of the system. Until now, however, the quantitative predictions were limited by a dependence of the results…
Improved accessibility to the microkelvin temperature regime is important for future research in quantum materials; for quantum information science; and for applications of quantum sensors. Here we report the design and performance of a…
Atom-in-jellium calculations of the Einstein frequency were used to calculate the mean displacement of an ion over a wide range of compression and temperature. Expressed as a fraction of the Wigner-Seitz radius, the displacement is a…
We study the statistical properties of a gas of interacting bosons trapped in a box potential in two and three dimensions. Our primary focus is the characteristic temperature $\tchar$, i.e. the temperature at which the fluctuations of the…
In this paper, a simple algorithm for detailed system-level thermal noise analysis is developed, demonstrated, and verified. This method uses noise-wave theory and noise covariance matrices to cascade noise and scattering parameters of…
We present numerically exact inchworm quantum Monte Carlo results for the real-time dynamics of the spin polarization in the sub-Ohmic spin-boson model at finite temperature. We focus in particular on the localization and coherence behavior…
We discuss the transition from a fully decoherent to a (quasi-)condensate regime in a harmonically trapped weakly interacting 1D Bose gas. By using analytic approaches and verifying them against exact numerical solutions, we find a…
Modern package designs make use of technologies such as backside power delivery (BSPD) and 3D stacked chiplets that require accounting for the heterogeneity in back end of the line (BEOL) structures in hot-spot prediction. Multiscale…
Fluctuations are significant in mesoscopic systems and of particular importance in understanding quantum transport. Here, we show that fluctuations can be considered as a resource for the operations of open quantum systems as functional…
The energy dependent thermoelectric response of a single molecule contains valuable information about its transmission function and its excited states. However, measuring it requires devices that can efficiently heat up one side of the…
It has been suggested by Timmermans [Phys. Rev. Lett. {\bf 87}, 240403 (2001)] that loss of fermions in a degenerate system causes strong heating. We address the fundamental limit imposed by this loss on the temperature that may be obtained…
When SOI-PMOS functions like a capacitor-less 1T-DRAM cell, it is possible for the number of electrons to be sensed at cryogenic temperatures (5K). We developed a structure that combines SOI-NMOS and SOI-PMOS with multiple gates to form a…
We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator…
A method to determine the density and temperature of a system is proposed based on quantum fluctuations typical of Bosons in the limit where the reached temperature T is close to the critical temperature $T_c$ for a Bose condensate at a…
We determine the critical temperature of a 3-d homogeneous system of hard-sphere Bosons by path-integral Monte Carlo simulations and finite-size scaling. At low densities, we find that the critical temperature is increased by the repulsive…
A model of hybridized bosons and fermions is studied beyond the mean field approximation. The divergent boson self-energy at zero temperature makes the Cooper pairing of fermions impossible.The frequency and momentum dependence of the self-…
An innovative and accurate dynamic Compact Thermal Model extraction method is proposed for multi-chip power electronics systems. It accounts for thermal coupling between multiple heat sources. Transient electro-thermal coupling can easily…
This paper presents a fully-integrated CMOS voltage reference designed in a 90 nm process node using low voltage threshold (LVT) transistor models. The voltage reference leverages subthreshold operation and near-weak inversion…