Related papers: Current-induced four-state magnetization switching…
All-optical ultrafast magnetization switching in magnetic material thin film without the assistance of an applied external magnetic field is being explored for future ultrafast and energy-efficient magnetic storage and memories. It has been…
Ultrafast demagnetization of magnetic layers pumped by a femtosecond laser pulse is accompanied by a nonthermal spin-polarized current of hot electrons. These spin currents are studied here theoretically in a spin valve with noncollinear…
We present a theoretical analysis of current driven ferromagnetic resonance in a ferromagnet/normal-metal/ferromagnet tri-layer. This method of driving ferromagnetic resonance was recently realized experimentally by Tulapurkar et al.…
A device based on current-induced spin-orbit torque (SOT) that functions as an electronic neuron is proposed in this work. The SOT device implements an artificial neuron's thresholding (transfer) function. In the first step of a two-step…
Electrical manipulation of spins is essential to design state-of-the-art spintronic devices and commonly relies on the spin current injected from a second heavy-metal material. The fact that chiral antiferromagnets produce spin current…
Spintronics-based nonvolatile components in neuromorphic circuits offer the possibility of realizing novel functionalities at low power. Current-controlled electrical switching of magnetization is actively researched in this context.…
Molecular beam epitaxy is used to fabricate magnetic single and double layer junctions which are deposited in prefabricated nanostencil masks. For all Co | Cu | Co double layer junctions we observe a stable intermediate resistance state…
We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switching of a three-terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current density rises significantly as the current pulse shortens below…
The magnetization switching of a thin ferromagnetic layer placed on top of a heavy metal (such as Pt, Ta or W) driven by an in-plane current has been observed in recent experiments. The magnetization dynamics of these processes is studied…
A new spin based logic device is proposed. It is comprised of a common free ferromagnetic layer separated by a tunnel junction from three inputs and one output with separate fixed layers. It has the functionality of a majority gate and is…
Spin-orbit torques in ferromagnet/nonmagnet/ferromagnet trilayers are studied using a combination of symmetry analysis, circuit theory, semiclassical simulations, and first-principles calculations using the non-equilibrium Green's function…
Two promising strategies for achieving efficient control of magnetization in future magnetic memory and non-volatile spin logic devices are spin transfer torque from spin polarized currents and voltage-controlled magnetic anisotropy (VCMA).…
We propose a magnetization reversal model to explain the perpendicular switching of a single ferromagnetic layer induced by an in-plane current. Contrary to previously proposed reversal mechanisms that such magnetic switching is directly…
Electrical current pulses can be used to manipulate magnetization efficiently via spin-orbit torques (SOTs). Pulse durations as short as a few picoseconds have been used to switch the magnetization of ferromagnetic films, reaching the THz…
A new mechanism different from the spin accumulation picture is proposed for the current induced magnetization switching in magnetic tunnel junctions by taking into account the effect of the electron electron interaction. We found in tunnel…
In the last few years, some ideas of electric manipulations in ferromagnetic heterostructures have been proposed for developing next generation spintronic devices. Among them, the magnetization switching driven by spin-orbit torque (SOT) is…
Spin-orbit torque (SOT) is a promising switching mechanism for magnetic random-access memory (MRAM) as a result of the potential for improved switching speed and energy-efficiency. It is of particular interest to develop an SOT-MRAM device…
Spin-orbit interaction derived spin torques provide a means of reversing the magnetization of perpendicularly magnetized ultrathin films with currents that flow in the plane of the layers. A basic and critical question for applications is…
A general expression of the current induced spin torque in a magnetic layered structure in the presence of external dc or ac voltages is derived in the framework of the scattering matrix approach. A detailed analysis is performed for a…
We present electrical measurements of high-frequency magnetic dynamics excited by spin-polarized currents in Co/Cu/Ni80Fe20 nanopillar devices, with a magnetic field applied perpendicular to the sample layers. As a function of current and…