Related papers: Ultra-low damping insulating magnetic thin films g…
To stabilize the non-trivial spin textures, e.g., skyrmions or chiral domain walls in ultrathin magnetic films, an additional degree of freedom such as the interfacial Dzyaloshinskii-Moriya interaction (IDMI) must be induced by the strong…
Perpendicular magnetic anisotropy (PMA) of magnets is paramount for electrically controlled spintronics due to their intrinsic potentials for higher memory density, scalability, thermal stability and endurance, surpassing an in-plane…
We present the fascinating magnetic properties in homogenous noble-metal-free and rare-earth-free L10-Mn1.5Ga epitaxial films on GaAs (001), including ultrahigh perpendicular coercivity remarkably tunable from 8.1 to 42.8 kOe, giant…
Perpendicularly magnetized films showing small saturation magnetization, $M_\mathrm{s}$, are essential for spin-transfer-torque writing type magnetoresistive random access memories, STT-MRAMs. An intermetallic compound, {(Mn-Cr)AlGe} of the…
Spintronics exploits the magnetoresistance effects to store or sense the magnetic information. Since the magnetoresistance strictly depends on the magnetic anisotropy of the system, it is fundamental to set a defined anisotropy to the…
Perpendicular magnetic materials with low damping constant and high thermal stability have great potential for realizing high-density, non-volatile, and low-power consumption spintronic devices, which can sustain operation reliability for…
The observation of perpendicular magnetic anisotropy (PMA) at MgO/Fe interfaces boosted the development of spintronic devices based on ultrathin ferromagnetic layers. Yet, magnetization reversal in the standard magnetic tunnel junctions…
The artificial tailoring of magnetic anisotropy by manipulation of interfacial morphology and film structure are of fundamental interest from application point of view in spintronic and magnetic memory devices. This letter reports an…
The half-metallic half-Heusler alloy NiMnSb is a promising candidate for applications in spintronic devices due to its low magnetic damping and its rich anisotropies. Here we use ferromagnetic resonance (FMR) measurements and calculations…
Thin highly textured Fe$_{\mathrm{1+x}}$Co$_{\mathrm{2-x}}$Si ($0 \leq$ x $\leq 1$) films were prepared on MgO (001) substrates by magnetron co-sputtering. The magneto-optic Kerr effect (MOKE) and ferromagnetic resonance (FMR) measurements…
Magnetic insulators such as yttrium iron garnet, Y3Fe5O12, with extremely low magnetic damping have opened the door for low power spin-orbitronics due to their low energy dissipation and efficient spin current generation and transmission.…
The magnetic properties of annealed, epitaxial Ga0.93Mn0.07As layers under tensile and compressive stress have been investigated by X-band (9GHz) and Q-band (35GHz) ferromagnetic resonance (FMR) spectroscopy. From the analysis of the…
We report switching of magnetic anisotropy (MA) from in-plane to perpendicular with increasing the thickness d of a (001)-oriented ferromagnetic-semiconductor (FMS) (Ga0.7,Fe0.3)Sb layer with a high Curie temperature (Tc > 320 K), using…
We report strong damping enhancement in a 200 nm thick yttrium iron garnet (YIG) film due to spin inhomogeneity at the interface. The growth-induced thin interfacial gadolinium iron garnet (GdIG) layer antiferromagnetically (AFM) exchange…
The ability to tailor the damping factor is essential for spintronic and spin-torque applications. Here, we report an approach to manipulate the damping factor of FeGa/MgO(001) films by oblique deposition. Owing to the defects at the…
We report on a strong perpendicular magnetic anisotropy in [CoFe 0.4nm/Pd t]6 (t = 1.0-2.0 nm) multilayers fabricated by DC sputtering in a ultrahigh vacuum chamber. Saturation magnetization, $M_s$, and uniaxial anisotropy, $K_u$, of the…
We demonstrate patterned growth of epitaxial yttrium iron garnet (YIG) thin films using lithographically defined templates on gadolinium gallium garnet (GGG) substrates. The fabricated YIG nanostructures yield the desired crystallographic…
Thin Yttrium Iron Garnet (YIG) is a promising material for integrated magnonics. In order to introduce YIG into nanofabrication processes it is necessary to fabricate very thin YIG films with a thickness well below 100 nm while retaining…
We report an investigation of anisotropic magnetoresistance (AMR) and anomalous Hall resistance (AHR) of Rh and Pt thin films sputtered on epitaxial Y$_3$Fe$_5$O$_{12}$ (YIG) ferromagnetic insulator films. For the Pt/YIG hybrid, large…
The competition between shape and perpendicular magnetic anisotropies (PMA) in magnetic thin films gives rise to unusual magnetic behaviors. In ferromagnetic films with moderate PMA the magnetic domain configuration transitions from planar…