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Related papers: The current-induced spin-orbit torque and field-fr…

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Voltage control of magnetism and spintronics have been highly desirable, but rarely realized. In this work, we show voltage-controlled spin-orbit torque (SOT) switching in W/CoFeB/MgO films with perpendicular magnetic anisotropy (PMA) with…

Materials Science · Physics 2021-02-04 Jinsong Xu , C. L. Chien

We present a comprehensive study of the current-induced spin-orbit torques in perpendicularly magnetized Ta/CoFeB/MgO layers. The samples were annealed in steps up to 300 degrees C and characterized using x-ray absorption spectroscopy,…

Realizing deterministic current-induced spin-orbit torque (SOT) magnetization switching, especially in systems exhibiting perpendicular magnetic anisotropy (PMA), typically requires the application of a collinear in-plane field, posing a…

Applied Physics · Physics 2024-07-08 Zhe Zhang , Zhuoyi Li , Yuzhe Chen , Fangyuan Zhu , Yu Yan , Yao Li , Liang He , Jun Du , Rong Zhang , Jing Wu , Xianyang Lu , Yongbing Xu

Deterministic current-induced spin-orbit torque (SOT) switching of magnetization in a heavy transition metal/ferromagnetic metal/oxide magnetic heterostructure with the ferromagnetic layer being perpendicularly-magnetized typically requires…

This study reports the magnetization switching induced by spin-orbit torque (SOT) from the spin current generated in Co2MnGa magnetic Weyl semimetal (WSM) thin films. We deposited epitaxial Co2MnGa thin films with highly B2-ordered…

Materials Science · Physics 2021-02-09 Ke Tang , Zhenchao Wen , Yong-Chang Lau , Hiroaki Sukegawa , Takeshi Seki , Seiji Mitani

Current-induced spin-orbit torque (SOT) is regarded as a promising mechanism for driving neuromorphic behavior in spin-orbitronic devices. In principle, the strong SOT in heavy metal-based magnetic heterostructure is attributed to the…

Mesoscale and Nanoscale Physics · Physics 2022-05-31 Tian-Yue Chen , Yu-Chan Hsiao , Wei-Bang Liao , Chi-Feng Pai

Spin-orbit torque (SOT) induced magnetisation switching in CoFeB/Ta/CoFeB trilayer with two CoFeB layers exhibiting in-plane magnetic anisotropy (IPMA) and perpendicular magnetic anisotropy (PMA) is investigated. Interlayer exchange…

High-entropy alloy (HEA) is a family of metallic materials with nearly equal partitions of five or more metals, which might possess mechanical and transport properties that are different from conventional binary or tertiary alloys. In this…

Materials Science · Physics 2017-10-18 Tian-Yue Chen , Tsao-Chi Chuang , Ssu-Yen Huang , Hung-Wei Yen , Chi-Feng Pai

We achieve current-induced switching in collinear insulating antiferromagnetic CoO/Pt, with fourfold in-plane magnetic anisotropy. This is measured electrically by spin Hall magnetoresistance and confirmed by the magnetic field-induced…

The spin currents generated by spin-orbit coupling (SOC) in the nonmagnetic metal layer or at the interface with broken inversion symmetry are of particular interest and importance. Here, we have explored the spin current generation…

Materials Science · Physics 2020-03-02 Q. B. Liu , K. K. Meng , S. Q. Zheng , Y. C. Wu , J. Miao , X. G. Xu , Y. Jiang

We demonstrate spin-orbit torque (SOT) switching of amorphous CoTb single layer films with perpendicular magnetic anisotropy (PMA). The switching sustains even the film thickness is above 10 nm, where the critical switching current density…

A large anti-damping spin-obit torque (SOT) efficiency in magnetic heterostructures is a prerequisite to realize energy efficient spin torque based magnetic memories and logic devices. The efficiency can be characterized in terms of the…

We demonstrate efficient current induced spin orbit torque switching in perpendicularly magnetized epitaxial MgO(001)//Pd/Co2FeAl/MgO heterostructures grown by magnetron sputtering. The advantage of such heterostructures for spin orbit…

Mesoscale and Nanoscale Physics · Physics 2020-05-27 M. S. Gabor , T. Petrisor , M. Nasui , M. A. Nsibi , J. Nath , I. M. Miron

In the last few years, some ideas of electric manipulations in ferromagnetic heterostructures have been proposed for developing next generation spintronic devices. Among them, the magnetization switching driven by spin-orbit torque (SOT) is…

Materials Science · Physics 2019-03-27 P. F. Liu , J. Miao , Q. Liu , Z. D. Xu , Z. Y. Ren , K. K. Meng , Y. Wu , J. K. Chen , X. G. Xu , Y. Jiang

We measured the spin-orbit torques (SOTs), current-induced switching, and domain wall (DW) motion in synthetic ferrimagnets consisting of Co/Tb layers with differing stacking order grown on a Pt underlayer. We find that the SOTs, magnetic…

Materials Science · Physics 2022-06-06 Mickey Martini , Can Onur Avci , Silvia Tacchi , Charles-Henri Lambert , Pietro Gambardella

Magnetization reversal of a perpendicular ferromagnetic free layer by spin-orbit torque (SOT) is an attractive alternative to spin-transfer torque (STT) switching in magnetic random-access memory (MRAM) where the write process involves…

Mesoscale and Nanoscale Physics · Physics 2015-11-19 Yong-Chang Lau , Davide Betto , Karsten Rode , JMD Coey , Plamen Stamenov

The origin of spin-orbit torques generated from the conversion of charge-to-spin currents is of considerable debate. Solid understanding of the physics behind is key to the development of current and voltage controlled switching dynamics in…

Materials Science · Physics 2018-06-14 Yuanmin Du

Current induced spin-orbit effective magnetic fields in metal/ferromagnet/oxide trilayers provide a new way to manipulate the magnetization, which is an alternative to the conventional current induced spin transfer torque arising from…

Spin-orbit torque facilitates efficient magnetization switching via an in-plane current in perpendicularly magnetized heavy metal/ferromagnet heterostructures. The efficiency of spin-orbit-torque-induced switching is determined by the…

It is crucial that magnetic memory devices formed from magnetic heterostructures possess sizable spin-orbit torque (SOT) efficiency and high thermal stability to realize both efficient SOT control and robust storage of such memory devices.…

Mesoscale and Nanoscale Physics · Physics 2020-12-11 Wei-Bang Liao , Tian-Yue Chen , Yu-Chan Hsiao , Chi-Feng Pai
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