Related papers: Spin-orbit torque in completely compensated synthe…
We predict an unconventional spin-transfer torque (STT) acting on the magnetization of a free ferromagnetic (F) layer within N/TI/F vertical heterostructures which originates from strong spin-orbit coupling (SOC) on the surface of a…
Spin-orbit torques (SOTs) have opened a new path to switch the magnetization in perpendicularly magnetized films and are of great interest due to their potential applications in novel data storage technology, such as the magnetic random…
Antiferromagnetic spintronics actively introduces new principles of magnetic memory, in which the most fundamental spin-dependent phenomena, i.e. anisotropic magnetoresistance effects, are governed by an antiferromagnet instead of a…
To address thermal stability issues for spintronic devices with a reduced size, we investigate spin-orbit torque in Co/Pt multilayers with strong perpendicular magnetic anisotropy. Note that the spin-orbit torque arises from the global…
Current-induced magnetization switching by spin-orbit torque (SOT) holds considerable promise for next generation ultralow-power memory and logic applications. In most cases, generation of spin-orbit torques has relied on an external…
Magnetic random-access memory (MRAM) driven by spin-transfer torque (STT) is a major contender for future memory applications. The energy dissipation involved in writing remains problematic, even with the advent of more efficient…
Electrical switching and readout of antiferromagnets allows to exploit the unique properties of antiferromagnetic materials in nanoscopic electronic devices. Here we report experiments on the spin-orbit torque induced electrical switching…
Spin-orbit torques, which utilize spin currents arising from the spin-orbit coupling, offer a novel method to electrically switch the magnetization with perpendicular anisotropy. However, the necessity of an external magnetic field to…
The manipulation of magnetization via Magnetic torques is one of the most important phenomena in spintronics. In thin films, conventionally, a charge current flowing in a heavy metal is used to generate transverse spin currents and to exert…
Electrical manipulation of magnetization is essential for integration of magnetic functionalities such as magnetic memories and magnetic logic devices into electronic circuits. The current induced spin-orbit torque (SOT) in heavy…
The control of antiferromagnets by magnetic fields represents a fundamental challenge in condensed matter physics, owing to their fully compensated magnetic order and vanishing net magnetization. Conventional methods rely on either…
Antiferromagnetic materials promise improved performance for spintronic applications, as they are robust against external magnetic field perturbations and allow for faster magnetization dynamics compared to ferromagnets. The direct…
We demonstrate a strong tunability of the spin-pumping contribution to magnetic damping in a thin-film ferromagnetic free layer interfaced with a synthetic ferrimagnet (SFM), acting as a spin-sink, via a thin Cu-spacer. The effect strongly…
Researchers have recently identified a novel class of magnetism, termed "altermagnetism", which exhibits characteristics of both ferromagnetism and antiferromagnetism. Here, we report a groundbreaking discovery of efficient field-free…
In the increasing interests on spin-orbit torque (SOT) with various magnetic materials, we investigated SOT in rare earth-transition metal ferrimagnetic alloys. The harmonic Hall measurements were performed in Pt/GdFeCo bilayers to quantify…
Development of modern spintronic devices requires materials exhibiting specific magnetic effects. In this paper, we investigate a magnetization reversal mechanism in a [Co/Pdx]7/CoO/[Co/Pdy]7 thin-film composite where an antiferromagnet is…
Current-driven spin torques in metallic spin-valves composed of antiferromagnets are theoretically studied using the non-equilibrium Green's function method implemented on a tight-binding model. We focus our attention on G-type and L-type…
Extensive efforts have been devoted to the study of spin-orbit torque in ferromagnetic metal/heavy metal bilayers and exploitation of it for magnetization switching using an in-plane current. As the spin-orbit torque is inversely…
In F/S/F trilayers where the magnetization directions of the F layers can be controlled separately, it has theoretically been predicted that the antiparallel (AP) configuration can have a higher superconducting transition temperature T_c…
Domain wall (DW) dynamics in antiferromagnetic (AFM) systems offer the advantages over their ferromagnetic counterparts of having faster and more energy efficient manipulation due to the absence of net magnetization, leading to reduced…