Related papers: Spin-orbit torque in completely compensated synthe…
Spin-orbit coupling in inversion-asymmetric magnetic crystals and structures has emerged as a powerful tool to generate complex magnetic textures, interconvert charge and spin under applied current, and control magnetization dynamics.…
Spin-orbit torque (SOT) provides an efficient way to achieve charge-to-spin conversion and can switch perpendicular magnetization, which is essential for designing novel energy-efficient spintronic devices. An out-of-plane SOT could…
The spin-orbit torque switching of ferrimagnetic Gd$_x$(Fe$_{90}$Co$_{10}$)$_{100-x}$ films was studied for both transition metal (TM)-rich and rare earth (RE)-rich configurations. The spin-orbit torque driven magnetization switching…
In spite of the absence of a macroscopic magnetic moment, an anti-ferromagnet is spin-polarized on an atomic scale. The electric current passing through a conducting anti-ferromagnet is polarized as well, leading to spin-transfer torques…
Antiferromagnets are outstanding candidates for the next generation of spintronic applications, with great potential for downscaling and decreasing power consumption. Recently, the manipulation of bulk properties of antiferromagnets has…
An applied electric current through a space-inversion asymmetric magnet induces spin-orbit torques (SOTs) on the magnetic moments, which holds much promise for future memory devices. We discuss general Green's function expressions suitable…
Spintronic artificial neurons are intriguing building blocks for energy efficient Neuromorphic Computing (NC). Nevertheless, most contemporary implementations rely on symmetry breaking external in plane magnetic fields (H_X) for neuron…
Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets that represent the more common form of magnetically ordered materials, have so far found less practical application beyond their use for…
We suggest coherent switching of canted antiferromagnetic (AFM) spins using spin-orbit torque (SOT) in small magnet. The magnetic system of orthoferrite features biaxial easy anisotropy and the Dzyaloshinskii Moriya interaction, which is…
In recent years, there has been a growing interest in spin-orbit torques (SOTs) for manipulating the magnetization in nonvolatile magnetic memory devices. SOTs rely on the spin-orbit coupling of a nonmagnetic material coupled to a…
Ferrimagnets have the potential to play a key role in spintronics due to their high stability, low energy consumption, and rapid magnetic state switching. These characteristics are typically observed in ferrimagnetic materials near magnetic…
We report on the combination of current-induced spin-orbit torques and giant magnetoresistance in a single device to achieve all-electrical write and read out of the magnetization. The device consists of perpendicularly magnetized TbCo and…
We proposed a novel and simple multilayer structure to realize the deterministic switching of perpendicularly magnetized layers (Co in our work) by spin orbital torque from the spin Hall Effect in this paper. A pinned layer is introduced,…
We demonstrate efficient current induced spin orbit torque switching in perpendicularly magnetized epitaxial MgO(001)//Pd/Co2FeAl/MgO heterostructures grown by magnetron sputtering. The advantage of such heterostructures for spin orbit…
Magnetic heterostructure Mo/CoFeB/MgO has strong perpendicular magnetic anisotropy and thermal stability. Through current-induced hysteresis loop shift measurements, we show that the dampinglike spin-orbit torque (SOT) efficiency of…
An antiferromagnet is a promising material for spin-orbit torque generation. Earlier studies of the spin-orbit torque in an antiferromagnet are limited to collinear spin configurations. We calculate the spin-orbit torque in an…
Understanding the rich physics of magnetization dynamics in perpendicular synthetic antiferromagnets (p-SAFs) is crucial for developing next-generation spintronic devices. In this work, we systematically investigate the magnetization…
The control of magnetization by electric current is a rapidly developing area motivated by a strong synergy between breakthrough basic research discoveries and industrial applications in the fields of magnetic recording, magnetic field…
With ultra-fast writing capacity and high reliability, the spin-orbit torque is regarded as a promising alternative to fabricate next-generation magnetic random access memory. However, the three-terminal setup can be challenging when…
We demonstrated current-induced four-state magnetization switching in a trilayer system using spin-orbit torques. The memory device contains two Co layers with different perpendicular magnetic anisotropy, separated by a space layer of Pt.…