Related papers: Quantum-spin-Hall insulator with a large gap: sing…

Quantum spin Hall (QSH) insulator with large gap is highly desirable for potential spintronics application. Here we realize electrically tunable QSH insulator with large gap in van der Waals heterobilayer of monolayer transition metal…

Based on DFT calculation, we predict that BiCN, i.e., bilayer Bi films passivated with -CN group, is a novel 2D Bi-based material with highly thermodynamic stability, and demonstrate that it is also a new kind of 2D TI with a giant SOC gap…

We theoretically show that the three-dimensional (3D) topological insulator (TI)/thin-film ferromagnetic metal (FMM) bilayer structure is possible to be a quantum anomalous Hall (QAH) insulator with a wide global band gap. Studying the band…

Three-dimensional topological insulators (TIs) are a perfectly tuned quantum-mechanical machinery in which counter-propagating and oppositely spin-polarized conduction channels balance each other on the surface of the material. This…

The effect of quantizing magnetic field on the electron transport is investigated in a two dimensional topological insulator (2D TI) based on a 8 nm (013) HgTe quantum well (QW). The local resistance behavior is indicative of a…

By using angle-resolved photoemission spectroscopy combined with first-principles calculations, we reveal that the topmost unit cell of ZrSnTe crystal hosts two-dimensional (2D) electronic bands of topological insulator (TI) state, though…

The convergence of topology and correlations represents a highly coveted realm in the pursuit of novel quantum states of matter. Introducing electron correlations to a quantum spin Hall (QSH) insulator can lead to the emergence of a…

MoS$_2$, one of transition metal dichalcogenides (TMDs), has caused a lot of attentions for its excellent semiconductor characteristics and potential applications. Here, based on the density functional theory methods, we predict a novel 2D…

Following the recent proposal by Weeks et al., which suggested that indium (or thallium) adatoms deposited on the surface of graphene should turn the latter into a quantum spin Hall (QSH) insulator characterized by a sizeable gap, we…

Certain insulating materials with strong spin-orbit coupling can conduct currents along their edges or surfaces. This phenomenon arises from the non-trivial topological properties of the electronic band-structure, and is somewhat similar to…

We envision that quantum spin Hall effect should be observed in $(111)$-oriented thin films of SnSe and SnTe topological crystalline insulators. Using a tight-binding approach supported by first-principles calculations of the band…

Quantum spin Hall (QSH) insulators are a topologically protected phase of matter in two dimensions that can support non-dissipative spin transport. A hallmark of the phase is a pair of helical edge states surrounding an insulating bulk. A…

As a model for describing finite-size effects in topological insulator thin films, we study a one-dimensional (1D) effective model of a topological insulator (TI). Using this effective 1D model, we reveal the precise correspondence between…

Heterostructures between two-dimensional quantum spin Hall insulators (QSHI) and superconducting materials can allow for the presence of Majorana Fermions at their conducting edge states. Although a strong interface hybridization helps…

Using first principles techniques, we show that infrared optical response can be used to discriminate between the topological and the trivial phases of two-dimensional quantum spin Hall insulators (QSHI). We showcase germanene and…

By the generalized gradient approximation in framewok of density functional theory, we investigate a 2D topological insulator of new silicon allotrope (call dumbbell silicene synthesized recently by Cahangirov et al) through tuning external…

Material defects remain as the main bottleneck to the progress of topological insulators (TIs). In particular, efforts to achieve thin TI samples with dominant surface transport have always led to increased defects and degraded mobilities,…

In principle the stacking of different two-dimensional (2D) materials allows the construction of 3D systems with entirely new electronic properties. Here we propose to realize topological crystalline insulators (TCI) protected by mirror…

Topological insulators are materials with a bulk excitation gap generated by the spin orbit interaction, and which are different from conventional insulators. This distinction is characterized by Z_2 topological invariants, which…

Group III-V films are of great importance for their potential application in spintronics and quantum computing. Search for two-dimensional III-V films with a nontrivial large-gap are quite crucial for the realization of dissipationless…