Related papers: Quantum-spin-Hall insulator with a large gap: sing…
The recently synthesized ternary quasi-2D material TaRhTe$_4$ is a bulk Weyl semimetal with an intrinsically layered structure, which poses the question how the topology of its electronic structure depends on layers separations.…
Nontrivial band topology along with magnetism leads to different novel quantum phases. When time-reversal-symmetry is broken in three-dimensional topological insulators (TIs) by applying high enough magnetic field or proximity effect,…
The electronic states of a single Bi(111) bilayer and its edges, suggested as a two dimensional topological insulator, are investigated by scanning tunneling spectroscopy (STS) and first-principles calculations. Well-ordered bilayer films…
We report on fabrication of a two-dimensional topological insulator-Bi(111) bilayer on Sb nanofilms via a sequential molecular beam epitaxy (MBE) growth technique. Our angle-resolved photoemission measurements demonstrate the evolution of…
We report finite-size topology in the quintessential time-reversal (TR) invariant systems, the quantum spin Hall insulator (QSHI) and the three-dimensional, strong topological insulator (STI): previously-identified helical or Dirac cone…
Quantum spin Hall (QSH) effect with great promise for the potential application in spintronics and quantum computing has attracted extensive research interest from both theoretical and experimental researchers. Here, we predict monolayer…
The major breakthroughs in the understanding of topological materials over the past decade were all triggered by the discovery of the Z$_2$ topological insulator (TI). In three dimensions (3D), the TI is classified as either "strong" or…
Evidence for the quantum spin Hall (QSH) effect has been reported in several experimental systems in the form of approximately quantized edge conductance. However, the most fundamental feature of the QSH effect, spin-momentum locking in the…
Two dimensional (2D) topological insulators (TIs) and topological superconductors (TSCs) have been intensively studied for recent years due to its great potential for dissipationless electron transportation and fault-tolerant quantum…
As the thickness of a three-dimensional (3D) topological insulator (TI) becomes comparable to the penetration depth of the surface states, quantum tunneling between surfaces turns their gapless Dirac electronic structure into a gapped…
The paradigm of classifying three-dimensional (3D) topological insulators into strong and weak ones (STI and WTI) opens the door for the discovery of various topological phases of matter protected by different symmetries and defined in…
Generally, stacking two quantum spin Hall insulators gives rise to a trivial insulator. Here, based on first-principles electronic structure calculations, we confirm that monolayer TaIrTe$_{4}$ is a quantum spin Hall insulator and…
Identifying the two-dimensional (2D) topological insulating (TI) state in new materials and its control are crucial aspects towards the development of voltage-controlled spintronic devices with low power dissipation. Members of the 2D…
The quantum spin Hall (QSH) effect has attracted extensive research interest because of the potential applications in spintronics and quantum computing, which is attributable to two conducting edge channels with opposite spin polarization…
The recently introduced classification of two-dimensional insulators in terms of topological crystalline invariants has been applied so far to "obstructed" atomic insulators characterized by a mismatch between the centers of the electronic…
The search for new quantum spin Hall (QSH) phase and effective manipulations of their edge states are very important for both fundamental sciences and practical applications. Here, we use first-principles calculations to study the…
Based on a combination of $k \cdot p$ theory, band topology analysis and electronic structure calculations, we predict the (111) thin films of the SnTe class of three-dimensional (3D) topological crystalline insulators realize the quantum…
We study the three-dimensional topological insulator (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ in its ultrathin limit i.e. when the thickness is of the same order as the surface state penetration depth. It is expected that in this limit a…
Weak topological insulators, constructed by stacking quantum spin Hall insulators with weak interlayer coupling, offer promising quantum electronic applications through topologically nontrivial edge channels. However, the currently…
Topological edge states at the boundary of quantum spin Hall (QSH) insulators hold great promise for dissipationless electron transport. The device application of topological edge states has several critical requirements for the QSH…