Related papers: Transient Phenomena in Sub-Band Gap Impact Ionizat…
In the past decade, photo-induced superconducting-like behaviors have been reported in a number of materials driven by intense pump fields. Of particular interest is the high-$T_c$ cuprate $\rm Y Ba_2 Cu_2 O_{6+x}$ (YBCO), where such effect…
Reliable and precise measurements of the relative energy of band edges in semiconductors are needed to determine band gaps and band offsets, as well as to establish the band diagram of devices and heterostructures. These measurements are…
We have formed superconducting contacts in which Cooper pairs incident from a thick In layer must move through a thin Nb layer to reach a semiconductor, either InAs or low temperature grown (LTG) GaAs. The effect of pair tunneling through…
In this paper, we have presented the impact of the gate leakage through thin gate dielectrics (SiO2 and high-\k{appa} gate dielectric) on the subthreshold characteristics of the tunnel field effect transistors (TFET) for a low operating…
We propose a steep-slope MoS2-nanoribbon field-effect transistor that exploits a narrow-energy conduction band to intrinsically filter out the thermionic tail of the electron energy distribution. We study the device operation principle and…
Quantum materials exhibiting phase transitions which can be controlled through external stimuli, such as electric fields, are promising for future computing technologies beyond conventional semiconductor transistors. Devices that take…
This work provides a detailed mapping of various mechanisms of surface-trap-induced gate leakage in GaN HEMTs across a temperature range from room to cryogenic levels. Two-dimensional variable-range hopping is observed at small gate bias.…
It has been shown recently that the overpotential originating from ionic conduction of alkali-ions through the inner dense solid-electrolyte interphase (SEI) is strongly non-linear. An empirical equation was proposed to merge the measured…
Quantized conductance is reported in high-crystalline tin oxide (SnO2) nanobelt back-gate field-effect transistors, at low temperatures. The quantized conductance was observed as current oscillations in the drain current vs. gate voltage…
A two-dimensional (2D) electron gas formed in a modulation-doped GaAs/AlGaAs single quantum well undergoes a first-order transition when the first excited subband is occupied with electrons, as the Fermi level is tuned into resonance with…
A two-band model with repulsive interband coupling and interband {\it transport} (potential) scattering is considered to elucidate their effects on material properties. In agreement with previous work, we find that the bands order…
We analyze non-local effects in electron transport across three-terminal normal-superconducting-normal (NSN) structures. Subgap electrons entering S-electrode from one N-metal may form Cooper pairs with their counterparts penetrating from…
We investigate by low-temperature transport experiments the sub-threshold behavior of triple-gate silicon field-effect transistors. These three-dimensional nano-scale devices consist of a lithographically defined silicon nanowire surrounded…
Two-dimensional (2D) metal halides have received more attention because of their electronic and optoelectronic properties. Recently, researchers are interested to investigate the thermoelectric properties of metal halide monolayers because…
Superconductivity can be induced in a normal material via the leakage of superconducting pairs of charge carriers from an adjacent superconductor. This so-called proximity effect is markedly influenced by graphene unique electronic…
Thermoelectric effects in normal metals and superconductors are usually very small due to the presence of electron-hole symmetry. Here, we show that superconducting junctions brought out of equilibrium manifest a sizable bipolar…
Gradual reverse-bias breakdown in metal-halide perovskite diodes and solar cells is thought to originate from hole tunneling through steep bands in an ionic depletion region near the electron transport layer after positively charged iodine…
Many semiconductors present weak or forbidden transitions at their fundamental band gaps, inducing a widened region of transparency. This occurs in high-performing n-type transparent conductors (TCs) such as Sn-doped In2O3 (ITO), however…
The emergence of superconductivity with doping from correlated insulators in magic-angle twisted bilayer graphene (MATBG) has raised the intriguing possibility that its pairing mechanism is distinct from that of conventional…
We theoretically analyze non-local effects in electron transport across three-terminal ballistic normal-superconducting-normal (NSN) structures with spin-active interfaces. Subgap electrons entering S-electrode from one N-metal may form…