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Hybrid superconductor/semiconductor devices constitute a powerful platform to investigate the emergence of new topological state of matter. Among all possible semiconductor materials, InAs represents a promising choice, owing to its high…
We report temperature-dependent spin-Seebeck measurements on Pt/YIG bilayers and Pt/NiO/YIG trilayers, where YIG (Yttrium iron garnet, Y$_3$Fe$_5$O$_{12}$) is an insulating ferrimagnet and NiO is an antiferromagnet at low temperatures. The…
In a two-band system, both conventional sign-preserving $s_{++}$ and unconventional sign-changing $s_{\pm}$ superconducting state may appear at low temperatures. Moreover, they may transform from one to another due to the impurity…
Symmetry plays a critical role in determining various properties of a material. Semiconducting p-n junction diode exemplifies the engineered skew electronic response and is at the heart of contemporary electronic circuits. The…
In bilayer systems electron-hole (e-h) pairs with spatially separated components (i.e., with electrons in one layer and holes in the other) can be condensed to a superfluid state when the temperature is lowered. This article deals with the…
Low temperature ($\sim$ 20~K) electron irradiation with 2.5 MeV relativistic electrons was used to study the effect of controlled non-magnetic disorder on the normal and superconducting properties of the type-II Dirac semimetal PdTe$_2$. We…
The optical conductivity of freely suspended graphene was examined under non-equilibrium conditions using femtosecond pump-probe spectroscopy. We observed a conductivity transient that varied strongly with the electronic temperature,…
At low temperatures, the transport through a superconducting-normal tunnel interface is due to tunneling of electrons in pairs. The probability for this process is shown to depend on the layout of the electrodes near the tunnel junction,…
The total ionizing dose irradiation (TID) effects of partially depleted (PD) silicon-on-insulator (SOI)devices which fabricated with a commercial 0.2 um SOI process are investigated. Experimental results show an original phenomenon that the…
Gate-All-Around Field-Effect Transistors (GAAFETs), now entering high-volume production as successors to fin field-effect transistor technology, are enabling continued scaling and enhanced performance in advanced semiconductor nodes.…
Tunnel Field Effect Transistors (TFET) have extremely low leakage current, exhibit excellent subthreshold swing and are less susceptible to short channel effects. However, TFETs do face certain special challenges, particularly with respect…
We report specific heat measurements in neutron irradiated MgB2 samples, for which the critical temperature has been suppressed down to 8.5 K, but the superconducting transition remains extremely sharp, indicative of a defect structure…
We consider a thin normal metal sandwiched between two ferromagnetic insulators. At the interfaces, the exchange coupling causes electrons within the metal to interact with magnons in the insulators. This electron-magnon interaction induces…
We review the contribution of infrared spectroscopy to the study of the pseudogap in high temperature superconductors. The pseudogap appears as a depression of the frequency dependent conductivity in the c-axis direction and seems to be…
We study the transient phenomena appearing in a subgap region of the double quantum dot coupled in series between the superconducting and normal metallic leads, focusing on the development of the superconducting proximity effect. For the…
We demonstrate that absorption saturation of a mid-infrared intersubband transition can be engineered to occur at moderate light intensities of the order of 10-20 kW$.$cm$^{-2}$ and at room temperature. The structure consists of an array of…
Twisted bilayer graphene (TBG) provides an example of a system in which the interplay of interlayer interactions and superlattice structure impacts electron transport in a variety of non-trivial ways and gives rise to a plethora of…
Recent experiments have realized steady-state electrical injection of interlayer excitons in electron-hole bilayers subject to a large bias voltage. In the ideal case in which interlayer tunneling is negligibly weak, the system is in…
Since their discovery, it has been suggested that pairing in pnictides can be mediated by spin fluctuations between hole and electron bands. In this view, multiband superconductivity would substantially differ from other systems like MgB2,…
Electroluminescence properties of epitaxially grown n-ZnO/p-GaN pn-heterojunctions are investigated as functions of applied bias and temperature. The study reveals the existence of indirect interfacial excitons at sufficiently low…