Related papers: Low cost Ge/Si virtual substrate through dislocati…
Epitaxy of oxide materials on silicon (Si) substrates is of great interest for future functional devices using the large variety of physical properties of the oxides as ferroelectricity, ferromagnetism, or superconductivity. Recently,…
We present a conceptually novel approach to achieve selective area epitaxy of GaN nanowires. The approach is based on the fact that these nanostructures do not form in plasma-assisted molecular beam epitaxy on structurally and chemically…
We investigate Co nanostructures on Bi$_{2}$Se$_{3}$ by means of scanning tunneling microscopy and spectroscopy [STM/STS], X-ray absorption spectroscopy [XAS], X-ray magnetic dichroism [XMCD] and calculations using the density functional…
We explore the phase coherence of thin films of the topological insulator material Bi2Se2Te grown through pulsed laser deposition (PLD) technique. The films were characterised using various techniques for phase and composition. The films…
In this paper the early stages of the self-catalyzed Vapor-Liquid-Solid (VLS) growth of GaAs nanowires on epi-ready Si substrates by Molecular Beam Epitaxy (MBE) are studied. The interaction of Ga nano-droplets (NDs) with the silica…
Two-dimensional electron and hole gas systems, enabled through band structure design and epitaxial growth on planar substrates, have served as key platforms for fundamental condensed matter research and high performance devices. The…
Reducing the formation of cracks during growth of GaInP/GaInAs/Ge 3-junction solar cells on Ge|Si virtual substrates has been attempted by thinning the structure, namely the Ge bottom cell and the GaInAs middle cell. The theoretical…
Heterosubstrates have been extensively studied as a method to improve the heat dissipation of Ga$_{2}$O$_{3}$ devices. In this simulation work, we propose a novel role for $p$-type available heterosubstrates, as a component of a reduced…
Dislocation in (011)-oriented $\beta$-Ga$_2$O$_3$ substrates grown by the vertical Bridgman method was investigated using X-ray topography (XRT), combined with X-ray reticulography. Transmission XRT reveals dislocations lying on the (001)…
A possible mechanism for the formation of a 90{\deg} misfit dislocation at the Ge/Si(001) interface through homogeneous nucleation is identified from atomic scale calculations where a minimum energy path connecting the coherent epitaxial…
GaAs/Fe$_{3}$Si core/shell nanowire structures were fabricated by molecular-beam epitaxy on oxidized Si(111) substrates and investigated by synchrotron x-ray diffraction. The surfaces of the Fe$_3$Si shells exhibit nanofacets. These facets…
Dielectric waveguide (DWG) interconnects frequently utilize multimode waveguides due to their low dispersion in the fundamental mode. However, these links are more vulnerable to cross-modal coupling that significantly impacts their overall…
The dislocation microstructure developing during plastic deformation strongly influences the stress-strain properties of crystalline materials. The novel method of high resolution electron backscatter diffraction (HR-EBSD) offers a new…
In this paper we present a simple and effective numerical method which allows a fast Fourier transformation-based evaluation of stress generated by dislocations with arbitrary directions and Burgers vectors if the (site-dependent)…
Real time electron microscopy observation on morphological changes in gold nano structures deposited on Si (100) surfaces as a function of annealing temperatures has been reported. Two types of interfaces with the substrate silicon were…
We investigate the impact of threading dislocations with an edge component (a or a+c-type) on carrier recombination and diffusion in GaN(0001) layers close to the surface as well as in the bulk. To this end, we utilize cathodoluminescence…
Bi$_{2}$Te$_{3}$ and Bi$_{2}$Se$_{3}$ are well known 3D-topological insulators. Films made of these materials exhibit metal-like surface states with a Dirac dispersion and possess high mobility. The high mobility metal-like surface states…
We propose a guideline for exploring substrates that stabilize the monolayer honeycomb structure of silicene and germanene while simultaneously preserve the Dirac states: in addition to have a strong binding energy to the monolayer, a…
Dislocations and polishing-induced defect networks in synthetic diamond generate local strain fields that broaden Raman features and limit optical, thermal, and electronic performance. Sub-melt laser annealing has emerged as a route to…
Latent diffusion models such as Stable Diffusion 1.5 offer strong generative priors that are highly valuable for image restoration, yet their full pipelines remain too computationally heavy for deployment on edge devices. Existing…