Related papers: Nanophotonic Pockels modulators on a silicon nitri…
Applications such as augmented and virtual reality (AR/VR), optical atomic clocks, and quantum computing require photonic integration of (near-)visible laser sources to enable commercialization at scale. The heterogeneous integration of…
The study proposes an ultra-thin back side illuminated (BSI) and top-illuminated, Ge on Si photodetector (PD), for 1 to 1.4 microns wavelength range. The Ge thickness of 350 nm allows us to achieve high-speed performance at >60 GHz, while…
The implementation of terahertz (THz) wafer-level metadevices is critical to advance the science for applications including (I) integrated focal plane array which can image for biology and (II) integrated narrowband absorbers for high…
Kinetic inductance in thin film superconductors has been used as the basis for low-temperature, low-noise photon detectors. In particular thin films such as NbTiN, TiN, NbN, the kinetic inductance effect is strongly non-linear in the…
Interfacing electrical and optical systems is a ubiquitous requirement for modern networks. Competitive footprint, efficiency, and bandwidth figures have propelled interest in deploying integrated electro-optic modulators based on Pockels…
Silicon, a ubiquitous material in modern computing, is an emerging platform for realizing a source of indistinguishable single-photons on demand. The integration of recently discovered single-photon emitters in silicon into photonic…
Here, we experimentally demonstrate an Indium Tin Oxide (ITO) Mach-Zehnder interferometer heterogeneously integrated in silicon photonics. The phase shifter section is realized in a novel lateral MOS configuration, which, due to favorable…
Nonlinear photonic chips are capable of generating and processing signals all-optically with performance far superior to that possible electronically - particularly with respect to speed. Although silicon has been the leading platform for…
Recently, silicon nitride (Si3N4) photonic integrated circuits (PICs) are of a great interest due to their extremely low waveguides losses. The number of Si3N4 integrated photonics platform applications is constantly growing including the…
High-performance programmable silicon photonic circuits are considered to be a critical part of next generation architectures for optical processing, photonic quantum circuits and neural networks. Low-loss optical phase change materials…
We report on the fabrication and characterization of superconducting coplanar waveguide (CPW) resonators based on titanium nitride (TiN) thin films deposited on 200\,mm diameter high-resistivity Si(100) substrates. We systematically…
We demonstrate niobium titanium nitride superconducting nanowires patterned on stoichiometric silicon nitride waveguides for detecting visible and infrared photons. The use of silicon nitride on insulator on silicon substrates allows us to…
Metal oxides with strong nonlinear optical properties and wide transparency window are key materials for the development of compact and efficient photonic integrated circuits used for electro-optic modulators and entangled photon sources.…
Silicon carbide has emerged as a promising material platform for quantum photonics and nonlinear optics. These properties make the development of integrated photonic components in high-quality silicon carbide a critical aspect for the…
In this work, we have demonstrated a novel method to increase the electro-optic interaction in an intensity modulator at the C-band by optimizing the growth methodology of PZT with the metal (Ti/Pt) as a base material and the PZT poling…
Phase is an intrinsic property of light, and thus a crucial parameter across numerous applications in modern optics. Various methods exist for measuring the phase of light, each presenting challenges and limitations-from the mechanical…
Today's supercapacitor energy storages are typically discrete devices aimed for printed boards and power applications. The development of autonomous sensor networks and wearable electronics and the miniaturisation of mobile devices would…
We demonstrated a silicon integrated microring modulator working at the 2-um waveband with an L-shaped PN junction. 15-GHz 3-dB electro-optic bandwidth and <1 Vcm modulation efficiency for 45-Gbps NRZ-OOK signaling is achieved at 1960 nm.
The continuous growth in data volume has sparked interest in silicon-organic-hybrid nanophotonic devices integrated into silicon photonic integrated circuits (PICs). SOH devices offer improved speed and energy efficiency compared to silicon…
Thin-film lithium niobate (LN) photonic integrated circuits (PICs) could enable ultrahigh performance in electro-optic and nonlinear optical devices. To date, realizations have been limited to chip-scale proof-of-concepts. Here we…