Related papers: A ferroelectric problem beyond the conventional sc…
The boundary conditions, customarily used in the Landau-type approach to ferroelectric thin films and nanostructures, have to be modified to take into account that a surface of a ferroelectric (FE) is a defect of the ``field'' type. The…
The extrinsic size effect in Piezoresponse Force Microscopy of ferroelectric and piezoelectric thin films on non-polar dielectric substrate is analyzed. Analytical expressions for effective piezoresponse, object transfer function…
General energy approaches have been applied to study the single-domain polarization reversal induced by the voltage-modulated Atomic Force Microscopy (AFM) in ferroelectric single crystals and thin films. Topographic analysis of energy…
Pressure-induced polarization switching in ferroelectric thin films has emerged as a powerful method for domain patterning, allowing to create predefined domain patterns on free surfaces and under thin conductive top electrodes. However,…
Ferroelectric films in the paraelectric phase exhibit two undesirable properties: hysteresis in the voltage-capacitance characteristics and a significant relaxation time of the capacitance. Our experiments show that suppression of both of…
Since its discovery a decade ago, "polar metallic phase" has ignited significant research interest, as it further functionalizes the switchable electric polarization of materials with additional transport capability, granting them great…
Materials with ferroelectrically switchable topological properties are of interest for both fundamental physics and practical applications. Using first-principles calculations, we find that stacking ferroelectric $\alpha$-In$_2$Se$_3$…
Epitaxial FeRh(100) films (CsCl structure, $\sim 10\ ML\ $ thick), prepared {\it in-situ} on a W(100) single crystal substrate, have been investigated via valence band and core level photoemission. The presence of the temperature-induced,…
The temperature dependence of the interlayer electrical and thermal resistivity in a layered metal are calculated for Fermi liquid quasiparticles which are scattered inelastically by two-dimensional antiferromagnetic spin fluctuations. Both…
Recent experiments have shown that, in agreement with previous theoretical predictions, superconductivity in metallic nanostructures can be enhanced with respect to the bulk limit. Motivated by these results we study finite size effects…
Nonequilibrium states of quantum materials can exhibit exotic properties and enable unprecedented functionality and applications. These transient states are inherently inhomogeneous, characterized by the formation of topologically protected…
The ground-state polarization of PbTiO3 thin films is studied using a microscopic effective Hamiltonian with parameters obtained from first-principles calculations. Under short-circuit electrical boundary conditions, (001) films with…
Temperature-dependent magnetization measurements on a series of synthetic ferritin proteins containing from 100 to 3000 Fe(III) ions are used to determine the uncompensated moment of these antiferromagnetic particles. The results are…
After decades of searching for robust nanoscale ferroelectricity that could enable integration into the next generation memory and logic devices, hafnia-based thin films have appeared as the ultimate candidate because their ferroelectric…
We show how the periodicity of 180^{o} domains as a function of crystal thickness scales with the thickness of the domain walls both for ferroelectric and for ferromagnetic materials. We derive an analytical expression for the universal…
We consider a typical heterostructure domain patterned ferroelectric film/ultra thin dielectric layer/ semiconductor, where the semiconductor can be an electrolyte, paraelectric or multi layered graphene. Unexpectedly we have found that the…
The Letter by Dawber et al. [J. Phys.: Condens. Matter 15 L393 (2003)] notes that incomplete screening in the electrodes of a ferroelectric capacitor can result in an underestimate for the true coercive field in films of nanometer…
The first switchable electric polarization in metals was recently discovered in bilayer and trilayer WTe2. Strangely, despite the tininess of the ordered polarization, the ferroelectricity survives up to 350 K, rendering the mechanism of…
We use the two fluid model to determine the conditions under which the nuclear spin-lattice lattice relaxation rate, $T_1$, of candidate heavy quantum critical superconductors can exhibit scaling behavior and find that it can occur if and…
Ferroelectrics are essential in low-dimensional memory devices for multi-bit storage and high-density integration. A polar structure is a necessary premise for ferroelectricity, mainly existing in compounds. However, it is usually rare in…