Related papers: Limiting scattering processes in high-mobility InS…
We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system…
Effective electron mobilities are obtained by transport measurements on InAs nanowire field-effect transistors at temperatures ranging from 10-200 K. The mobility increases with temperature below ~ 30 - 50 K, and then decreases with…
In this study, we present our experimental investigation on the magnetotransport properties of a two-dimensional electron system in GaAs quantum wells utilizing a variety of device geometries, including obstacles with thin barriers and…
The large Land\'{e} g-factor, high spin-orbit coupling, and low effective mass of the two-dimensional electron gas in InSb quantum wells combined with proximal superconductivity may realize a scalable platform for topological quantum…
Indium Arsenide is a III-V semiconductor with low electron effective mass, a small band gap, strong spin-orbit coupling, and a large g-factor. These properties and its surface Fermi level pinned in the conduction band make InAs a good…
We observe high-mobility transport of indirect excitons in coupled GaAs quantum wells. A voltage-tunable in-plane potential gradient is defined for excitons by exploiting the quantum confined Stark effect in combination with a…
The most fundamental approach to an understanding of electronic, optical, and transport phenomena which the condensed matter physics (of conventional as well as nonconventional systems) offers is generally founded on two experiments: the…
At the Accelerator Test Facility (ATF) at KEK intrabeam scattering (IBS) is a strong effect for an electron machine. It is an effect that couples all dimensions of the beam, and in April 2000, over a short period of time, all dimensions…
Growth of high-quality single-crystalline InSb layers remains challenging in material science. Such layered InSb materials are highly desired for searching for and manipulation of Majorana fermions in solid state, a fundamental research…
We report on quantum magneto-oscillations in an ultra-high mobility GaAs/AlGaAs quantum well at very high tilt angles. Unlike previous studies, we find that the spin and cyclotron splittings become equal over a continuous range of angles,…
The two-dimensional electron system in an InAs quantum well has emerged as a prime candidate for hosting exotic quasi-particles with non-Abelian statistics such as Majorana fermions and parafermions. To attain its full promise, however, the…
Exploiting inversion symmetry breaking (ISB) in systems with strong spin-orbit coupling promises control of spin through electric fields - crucial to achieve miniaturization in spintronic devices. Delivering on this promise requires a…
We investigate the disorder properties of two-dimensional hole gases in Ge/SiGe heterostructures grown on Ge wafers, using thick SiGe barriers to mitigate the influence of the semiconductor-dielectric interface. Across several…
Anisotropic transport, Shubnikov-de Haas (SdH), and de Haas-van Alphen (dHvA) quantum oscillations studies are reported on a high-quality CoSi single crystal grown by the Czochralski method. Temperature-dependent resistivities indicate the…
We present an experimental study of low temperature electronic transport in the hybridization gap of inverted InAs/GaSb composite quantum wells. Electrostatic gate is used to push the Fermi level into the gap regime, where the conductance…
The coherence of hole spin qubits in germanium planar heterostructures is limited by the hyperfine coupling to the nuclear spin bath due to 29Si and 73Ge isotopes. Thus, removing these nuclear spin-full isotopes is essential to extend the…
We have studied the spin-orbit interaction in a high mobility two-dimensional electron gas in a GaInAs/InP heterostructure as a function of an applied gate voltage as well as a function of temperature. Highly sensitive magnetotransport…
We discuss the Seebeck coefficient and the Hall mobility of electrons confined in narrow SrTiO3 quantum wells as a function of the three-dimensional carrier density and temperature. The quantum wells contain a fixed sheet carrier density of…
Indium antimonide (InSb) two-dimensional electron gases (2DEGs) have a unique combination of material properties: high electron mobility, strong spin-orbit interaction, large Land\'{e} g-factor, and small effective mass. This makes them an…
Strong spin-orbit coupling and relatively weak hyperfine interactions make germanium hole spin qubits a promising candidate for semiconductor quantum processors. The two-dimensional hole gas structure of strained Ge quantum wells serves as…