Related papers: On the Validity and Applicability of Models of Neg…
We report on measurements and modeling of FE HfZrO/SiO2 Ferroelectric-Dielectric (FE-DE) FETs which indicate that many of the phenomena attributed to Negative Capacitance can be explained by a delayed response of ferroelectric domain…
We present a thorough analysis of the foundations of models of stabilization of negative capacitance (NC) in a ferroelectric (FE) layer by capacitance matching to a dielectric layer, which claim that the FE is stabilized in a low…
We analyze the distributions of electric potential and field, polarization and charge, and the differential capacitance of a silicon metal-oxide-ferroelectric field effect transistor (MOSFET), in which a gate insulator consists of thin…
In this paper, we take a fresh look at the physics and operation of Negative Capacitance FETs, and provide unambiguous feedback to the device designers by examining NC-FETs' design space for sub-60 mV/dec Subthreshold Swing (SS).…
In this work, we analyze the ferroelectric (FE) domain-wall (DW) induced negative capacitance (NC) effect in Metal-FE-Insulator-Metal (MFIM) and Metal-FE-Insulator-Semiconductor (MFIS) stacks. Our analysis is based on 2D phase field…
Negative capacitance (NC) in ferroelectrics, which stems from the imperfect screening of polarization, is considered a viable approach to lower voltage operation in the field-effect transistors (FETs) used in logic switches. In this paper,…
Since many years, sub-60mV/decade switching has been reported in ferroelectric FETs. However, thus far these reports have lacked full physical explanation since they typically use a negative capacitance in the ferroelectric layer to be able…
The device concept of ferroelectric-based negative capacitance (NC) transistors offers a promising route for achieving energy-efficient logic applications that can outperform the conventional semiconductor technology, while viable operation…
It is well known that conventional Field Effect Transistors (FET's) require a change in the channel potential of at least 60 mV at 300K to effect a change in the current by a factor of ten, and this minimum subthreshold slope S puts a lower…
In this letter, the transient behavior of a ferroelectric (FE) metal-oxide-semiconductor (MOS) capacitor is theoretically investigated with a series resistor. It is shown that compared to a conventional high-k dielectric MOS capacitor, a…
Gate tunable p-type multilayer tin mono-sulfide (SnS) field-effect transistor (FET) devices with SnS thickness between 50 and 100 nm were fabricated and studied to understand their performances. The devices showed anisotropic inplane…
Transient negative differential capacitance (NC), the dynamic reversal of transient capacitance in an electrical circuit is of highly technological and scientific interest since it probes the foundation of ferroelectricity. In this letter,…
Various models leading to predictions of negative capacitance, C, are briefly reviewed. Their relation to the nature of electric control is discussed. We reconfirm that the calculated double layer capacitance can be negative under S-control…
In this paper, an analytical predictive model of the negative capacitance (NC) effect in symmetric long channel double-gate junctionless transistor is proposed based on a charge-based model. In particular, we have investigated the effect of…
In this study, a SPICE model for negative capacitance vertical nanowire field-effect-transistor (NC VNW-FET) based on BSIM-CMG model and Landau-Khalatnikov (LK) equation was presented. Suffering from the limitation of short gate length…
Ferroelectric field-effect transistors (Fe-FETs) with ferroelectric hafnium oxide (FE HfO2) as gate insulator are being extensively explored as a promising device candidate for three-dimensional (3D) NAND memory application. FE HfO2…
Al$_{0.68}$Sc$_{0.32}$N (AlScN) has gained attention for its outstanding ferroelectric properties, including a high coercive field and high remnant polarization. Although AlScN-based ferroelectric field-effect transistors (FETs) for memory…
A topological quantum field effect transistor (TQFET) uses electric field to switch a material from topological insulator ("on", with conducting edge states) to a conventional insulator ("off"), and can have low subthreshold swing due to…
Boltzmann tyranny poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Negative…
Analytical calculations corroborated by the finite element modelling show that thin films of Van der Waals ferrielectrics covered by a 2D-semiconductor are promising candidates for the controllable reduction of the dielectric layer…