Related papers: Negative Capacitance as Digital and Analog Perform…
Ferroelectrics under suitable electric boundary conditions can present a negative capacitance response, whereby the total voltage drop across the ferroelectric opposes the externally applied bias. When the ferroelectric is in a…
Negative capacitance can be used to overcome the lower limit of subthreshold swing (SS) in field effect transistors (FETs), enabling ultralow-power microelectronics, though the concept of ferroelectric negative capacitance remains…
In this letter, the transient behavior of a ferroelectric (FE) metal-oxide-semiconductor (MOS) capacitor is theoretically investigated with a series resistor. It is shown that compared to a conventional high-k dielectric MOS capacitor, a…
The negative differential thermal conductance (NDTC) provides the key mechanism for realizing thermal transistors. This exotic effect has been the object of an extensive theoretical investigation, but the implementation is still limited to…
Nano-electronic integrated circuit technology is exclusively based on MOSFET transistor due to its scalability down to the nanometer range. On the other hand, Bipolar Junction Transistor (BJT), which provides unmatched analog…
Portable devices like smartphones, tablets, wearable electronic devices, medical implants, wireless sensor nodes, and Internet-of-Things (IoT) devices have tremendous constraints on their energy consumption. Adding more functionalities onto…
An unresolved challenge facing electronics at a few-nm scale is that resistive channels start leaking due to quantum tunneling. This affects the performance of nanoscale transistors, with single-molecule devices displaying particularly low…
Superconductivity was originally observed in 3D metals caused by an effective attraction between electrons mediated by the electron-phonon interaction. Since then there has been a lot of work on 2D conductors including the possibility of…
To extend the Moores law in the 5 nm node, a large number of two dimensional (2D) materials and devices have been thoroughly researched, among which the cold metals 2H MS2 (M = Nb, Ta) with unique band structures are expected to achieve the…
The mechanism of negative capacitance, e.g. inductance, induced by a sufficient electrical field in the organic device is investigated. The cations in organic bulk are proposed to be driven by the applied voltage and to accumulate at the…
Voltage modulated electroluminescence spectra and low frequency ({\leq} 100 kHz) impedance characteristics of electroluminescent diodes are studied. Voltage modulated light emission tracks the onset of observed negative capacitance at a…
Large-scale quantum computing requires cryogenic electronic controllers such as control/readout circuit and routing circuit. However, current technologies face high power dissipation problems, hindering large-scale qubit integration. Here,…
Most carbon nanotube field-effect transistors (CNTFETs) directly attach metal source/drain contacts to an intrinsic nanotube channel. When the gate oxide thickness is reduced, such transistors display strong ambipolar conduction, even when…
State-of-the-art in-memory computation has recently emerged as the most promising solution to overcome design challenges related to data movement inside current computing systems. One of the approaches to performing in-memory computation is…
In this paper we revisit the theory of negative capacitance, in a (i) standalone ferroelectric, (ii) ferroelectric-dielectric, and (iii) ferroelectric-semiconductor series combination, and show that it is important to minimize the total…
The gate-voltage-induced suppression of critical currents in metallic superconductors observed recently [De Simoni et al., Nat. Nanotechnol. 13, 802 (2018)] has raised crucial questions regarding the nature and mechanism of the electric…
In this paper a CMOS operational amplifier is presented which operates at 2V power supply and 1microA input bias current at 0.8 micron technology using non conventional mode of operation of MOS transistors and whose input is depended on…
We propose a framework to model ferroelectric negative capacitance: electrostatic Micro Electro Mechanical Systems (MEMS) hybrid actuators and analyze their dynamic (step input) response. Using this framework, we report the first proposal…
A vertical partial gate carbon nanotube (CNT) field-effect transistor (FET), which is amenable to the vertical CNT growth process and offers the potential for a parallel CNT array channel, is simulated using a self-consistent atomistic…
State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky barrier (SB)-modulated transistors. It is known that vertical scaling of the gate oxide significantly improves the performance of these devices. However,…