Related papers: Spin precession in anisotropic media
Magnetic anisotropy is a key parameter of magnetic materials as it decides the response in the presence of an external magnetic field. The artificial tailoring of magnetic anisotropy by manipulating surface and interface morphology is…
Evidence of spin precession and dephasing ("Hanle effect") induced by an external magnetic field is the only unequivocal proof of spin-polarized conduction electron transport in semiconductor devices. However, when spin dephasing is very…
We investigate the signature of magnetic surface anisotropy in nanoparticles in their spin-flip neutron scattering cross section. Taking into account the isotropic exchange interaction, an external magnetic field, a uniaxial or cubic…
We experimentally study the electronic spin transport in hBN encapsulated single layer graphene nonlocal spin valves. The use of top and bottom gates allows us to control the carrier density and the electric field independently. The spin…
We probe the spin dynamics in a thin magnetic film at ferromagnetic resonance by nuclear resonant scattering of synchrotron radiation at the 14.4 keV resonance of $^{57}$Fe. The precession of the magnetization leads to an apparent reduction…
Characterizing the anisotropic structure in noncollinear antiferromagnets is essential for antiferromagnetic spintronics. In this work, we provide a microscopic theory linking the anisotropy effects induced by the rigid-body rotation of…
The spin-dependent transport properties of armchair graphene nanoribbons in the presence of extrinsic spin-orbit coupling induced by a random distribution of Nickel adatoms is studied. By combining a recursive Green's function formalism…
We present a comprehensive magnetotransport analysis of monolayer 1T WTe2, highlighting the role of nonsymmorphic symmetries in governing edge-state spin behavior. By comparing the electronic transmission in nanoribbons with edges along the…
We present results of non-local and three terminal (3T) spin precession measurements on spin injection devices fabricated on epitaxial graphene on SiC. The measurements were performed before and after an annealing step at 150 degrees…
The current generation of spintronic devices, which use electron-spin relies on linear operations for spin-injection, transport and detection processes. The existence of nonlinearity in a spintronic device is indispensable for spin-based…
The concept of anisotropy of spin relaxation in non-magnetic metals with respect to the spin direction of the injected electrons relative to the crystal orientation is introduced. The effect is related to an anisotropy of the Elliott-Yafet…
We provide a theoretical description of diffusive charge and spin transport in hybrid devices containing altermagnets. Based on recently derived drift--diffusion equations for coupled charge and spin dynamics and general boundary…
The spin lifetime and Hanle signal amplitude dependence on bias current has been investigated in insulating Al$_{0.3}$Ga$_{0.7}$As:Si using a three-terminal Hanle effect geometry. The amplitudes of the Hanle signals are much larger for…
We study the depolarization of optically oriented electrons in quantum wells subjected to an in-plane magnetic field and show that the Hanle curve drastically depends on the carrier mobility. In low-mobility structures, the Hanle curve is…
Spin manipulation is one of the most critical challenges to realize spin-based logic devices and spintronic circuits. Graphene has been heralded as an ideal material to achieve spin manipulation but so far new paradigms and demonstrators…
Electrical spin injection and transport in silicon are central challenges for realizing semiconductor-based spintronic devices, particularly in p-type Si, where strong spin relaxation and interface effects often suppress detectable spin…
We report electrical spin injection and detection in degenerately doped n-type Ge channels using Mn5Ge3C0.8/Al2O3/n^{+}-Ge tunneling contacts for spin injection and detection. The whole structure is integrated on a Si wafer for…
Antiferromagnetic materials host pairs of spin-up and spin-down magnons which can be described in terms of a magnonic pseudospin. The close analogy between this magnonic pseudospin systems and that of electronic charge carriers led to the…
The electron spin decay lifetime in materials can be characterized by relaxation (T1) and irreversible (T2) and reversible (T2*) decoherence processes. Their interplay leads to a complex dependence of spin relaxation times on the direction…
A long spin-lifetime of electrons is the holy grail of spintronics, a field exploiting the electron angular momentum as information carrier and storage unit. Previous reports indicated a spin lifetime, $\tau_{\text{s}}$ near $10$ ns at best…