Related papers: Intrinsic Spin and Orbital Hall Effects from Orbit…
Recent findings indicate that orbital angular momentum (OAM) has the capability to induce the intrinsic orbital Hall effect (OHE), which is characterized by orbital Chern number in the orbital Hall insulator. Unlike the spin-polarized…
In transition metals and their compounds, the orbital degrees of freedom gives rise to an orbital current, in addition to the ordinary spin and charge currents. We reveal that considerably large spin and anomalous Hall effects (SHE and AHE)…
We study a two-dimensional electron system in the presence of spin-orbit interaction. It is shown analytically that the spin-orbit interaction acts as a transversal effective electric field, whose orientation depends on the sign of the…
We study the spin Hall effect (SHE) in graphene using a realistic multi-orbital tight-binding model that includes the atomic spin-orbit interaction. The SHE is found to be induced by the spin-dependent Aharonov-Bohm phase. In the metallic…
We theoretically investigate an extrinsic spin Hall effect (SHE) in semiconductor heterostructures due to the scattering by an artificial potential created by antidot, STM tip, etc. The potential is electrically tunable. First, we formulate…
The spin polarization induced by the spin Hall effect (SHE) in thin films typically points out of the plane. This is rooted on the specific symmetries of traditionally studied systems, not in a fundamental constraint. Recently, experiments…
The spin Hall effect (SHE), in which electrical current generates transverse spin current, plays an important role in spintronics for the generation and manipulation of spin-polarized electrons. The phenomenon originates from spin-orbit…
We propose a spin Hall effect (SHE) enhancement mechanism due to Kramers-Weyl point (KWP) alignment in chiral topological semimetals with high Chern numbers (CNs). Through model Hamiltonian calculations, we identify enhancements in the…
Exploration of spin-currents in organic semiconductors (OSECs) induced by resonant microwave absorption in ferromagnetic substrates has been of great interest for potential spintronics applications. Due to the inherently weak spin-orbit…
Altermagnetic materials, especially RuO$_2$, have recently attracted considerable attention for their unique magnetic properties and energy-efficient spintronic applications. However, recent experimental studies have reported highly…
A brief review is given on the spin Hall effect, where an external electric field induces a transverse spin current. It has been recognized over 30 years that such effect occurs due to impurities in the presence of spin-orbit coupling.…
A hole injected into a Mott insulator will gain an internal structure as recently identified by exact numerics, which is characterized by a nontrivial quantum number whose nature is of central importance in understanding the Mott physics.…
The inverse orbital Hall effect (IOHE) has recently attracted considerable attention as an emerging mechanism for terahertz (THz) emission based on ultrafast angular-momentum-to-charge conversion. Most experimental studies have focused on…
We report a comprehensive experimental investigation of orbital-to-charge conversion in metallic and semiconductor materials, emphasizing the fundamental roles of the inverse orbital Hall effect (IOHE) and the inverse orbital Rashba effect.…
Topological semimetals in chiral crystals, which possess both structural handedness and band crossings (or nodes) with topological chiral charge, exhibit many exotic physical properties. Here we demonstrate that the structural and…
The spin-Hall conductivity in spatially-homogeneous two-dimensional electron systems described by the spin-orbit Hamiltonian \hbar \Omega_p \sigma is presented as a sum of the universal part Me/8 \pi \hbar determined by the Berry phase…
The generation of spin and orbital currents is of crucial importance in the field of spin-orbitronics. In this work, using relativistic density functional theory and the Kubo linear-response formalism, we systematically investigate the spin…
Both intrinsic and extrinsic orbital Hall effects (OHE) in bilayer transition metal dichalcogenides (TMDs) are investigated in the presence of short-range disorder using quantum kinetic theory. Bilayer TMDs provide an ideal platform to…
We report the first electrical manipulation and detection of the mesoscopic intrinsic spin-Hall effect (ISHE) in semiconductors through non-local electrical measurement in nano-scale H-shaped structures built on high mobility HgTe/HgCdTe…
The spin Hall effect (SHE), induced by spin-orbit interaction in nonmagnetic materials, is one of the promising phenomena for conversion between charge and spin currents in spintronic devices. The spin Hall (SH) angle is the characteristic…