Related papers: Zn vacancy-donor impurity complexes in ZnO
Dopants of transition metal ions in II-VI semiconductors exhibit native 2+ valency. Despite this, 3+ or mixed 3+/2+ valency of iron ions in ZnO was reported previously. Several contradictory mechanisms have been put forward for explanation…
The physical nucleon is modeled as a bare nucleon surrounded by a pion cloud using a psuedoscalar pion-nucleon coupling to examine its implications for the neutron form factor, F_1, and the corresponding transverse charge density in the…
In this paper, we study the photoinduced switching of the nitrogen-vacancy (NV) center between two different charge states - negative (NV-) and neutral (NV0) at liquid helium temperature. The conversion of NV- to NV0 on a single defect is…
Building up a solid-state material from quantum dots (QD), which are often referred to as artificial atoms, offers the potential to create new materials with unprecedented macroscopic properties. The investigation of the electronic…
The effect of Zn substitution on the superconducting transition temperature, Tc, was investigated for the La2-xSrxCu1-yZnyO4 (Zn-LSCO) compounds over a wide range of hole concentration, p (= x), and Zn content (y) in the CuO2 plane. Zn…
Transparent conductive oxides (TCO) enable confinement of charge-sensitive ions and Rydberg atoms proximal to dielectric structures including waveguides and photon detectors. However, optical loss precludes the use of TCOs within…
Zn4Sb3 is shown to be entropically stabilized versus decomposition to Zn and ZnSb though the effects of configurational disorder and phonon free energy. Single phase stability is predicted for a range of compositions and temperatures.…
Using first principle electronic structure calculations we investigated the role of substitutional doping of B,N,P,Al and vacancies (${\cal V}$) in diamond (X$_{\alpha}$C$_{1-\alpha}$). In the heavy doping regime, at about $\sim 1-6%$…
A functionally graded Al-doped ZnO structure is presented which combines conductivity, visible transparency and light scattering with mechanical flexibility. The nano and meso-architecture, constituted by a hierarchical, large surface area,…
The surface effect and quantum confinement render nanomaterials the optoelectronic properties more susceptible to nonradiative processes than their bulk counterparts. These nonradiative processes usually contain a series of interwoven and…
Recently the point defect responsible for the intra-3$d$ luminescence of cobalt in doped ZnO samples has been indentified\,\cite{pssb2019}. In this work we further extend our investigation to other point defects in Co-doped ZnO. We use…
In this article we report about linear and nonlinear optical properties of intersubband cavity polariton samples, where the resonant photonic mode is a defect state in a metallo-dielectric photonic crystal slab. By tuning a single geometric…
We present a first-principles study of the relationship between stress, temperature and electronic properties in piezoelectric ZnO. Our method is a plane wave pseudopotential implementation of density functional theory and density…
We present electronic structure and transport calculations for hydrogen and lithium chains, using density functional theory and scattering theory on the Green's function level, to systematically study impurity effects on the transmission…
By studying Fe-doped ZnO pellets and thin films with various x-ray spectroscopic techniques, and complementing this with density functional theory calculations, we find that Fe-doping in bulk ZnO induces isovalent (and isostructural) cation…
The rapid growth of the solar energy industry has produced a strong demand for high performance, efficient photoelectric materials. Many ferroelectrics, composed of earth-abundant elements, are useful for solar cell applications due to…
Passivation of surface reactive ZnO(0001)-Zn terminated surface is carried out by in-situ deposition of indium metal and post deposition annealing at high temperature (600 C - 1000 C). After the every cycle of indium deposition and…
An approach is presented to modify the WF of solution-processed sol-gel derived ZnOover an exceptionally wide range of more than 2.3 eV. This approach relies on the formation of dense and homogeneous self-assembled monolayers based on…
Relaxations at nonpolar surfaces of III-V compounds result from a competition between dehybridization and charge transfer. First principles calculations for the (110) and (10$\bar{1}$0) faces of zincblende and wurtzite AlN, GaN and InN…
UV sensing in pure ZnO is due to oxygen adsorption/desorption process from ZnO surface. Vanadium doping improves UV sensitivity of ZnO. Enhancement in UV sensitivity in doped ZnO is attributed to trapping and de-trapping of electrons at V4+…