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Exhibiting antiferromagnetic interlayer coupling in dilute magnetic semiconductor multilayers is essential for the realisation of magnetoresistances analogous to giant magnetoresistance in metallic multilayer structures. In this work we use…

Materials Science · Physics 2008-09-03 A. D. Giddings , T. Jungwirth , B. L. Gallagher

The discovery that a spin polarized current can exert a large torque on a ferromagnet through a transfusion of spin angular momentum, offers a new way to control a magnetization by simple current injection, without the help of an applied…

The interlayer exchange coupling confers specific properties to Synthetic Antiferromagnets that make them suitable for several applications of spintronics. The efficient use of this magnetic configuration requires an in-depth understanding…

Materials Science · Physics 2022-11-07 A. Mouhoub , F. Millo , C. Chappert , J. -V. Kim , J. Létang , A. Solignac , T. Devolder

The electric manipulation of antiferromagnets has become an area of great interest recently for zero-stray-field spintronic devices, and for their rich spin dynamics. Generally, the application of antiferromagnetic media for information…

Mesoscale and Nanoscale Physics · Physics 2017-05-24 Muftah Al-Mahdawi , Satya Prakash Pati , Yohei Shiokawa , Shujun Ye , Tomohiro Nozaki , Masashi Sahashi

Exchange coupling between two magnetic layers through an interlayer is of broad interest for numerous recent applications of nano-magnetic systems. In this Letter we study ferromagnetic exchange coupling through amorphous paramagnetic Fe-Ta…

Materials Science · Physics 2013-04-11 Matthias Gottwald , Jimmy J. Kan , Kangho Lee , Seung H. Kang , Eric E. Fullerton

We demonstrate the current-induced complete magnetization reversal of the free layer in lateral nanowires patterned from metallic pseudo spin valve stacks. The reversal is induced by Oersted fields in conjunction with a dipolar coupling via…

Mesoscale and Nanoscale Physics · Physics 2015-02-24 J. Kleinlein , G. Schmidt

The dynamics of the magnetization of the free layer in a spin-torque nano oscillator (STNO) influenced by a noncollinear alignment between the magnetizations of the free and pinned layers due to an interlayer exchange coupling has been…

Applied Physics · Physics 2022-09-14 R. Arun , R. Gopal , V. K. Chandrasekar , M. Lakshmanan

Changing the interlayer exchange coupling between magnetic layers in-situ is a key issue of spintronics, as it allows for the optimization of properties that are desirable for applications, including magnetic sensing and memory. In this…

We investigate the ultrafast magnetization dynamics of an interlayer-exchange-coupled Co/Mn/Co trilayer system after excitation with an ultrafast optical pump. We probe element- and time-resolved ferromagnetic order by X-ray magnetic…

Reversing the magnetization of a ferromagnet by spin transfer from a current, rather than by applying a magnetic field, is the central idea of an extensive current research. After a review of our experiments of current-induced magnetization…

Materials Science · Physics 2009-11-10 A. Fert , V. Cros , J. -M. George , J. Grollier , H. Jaffres , A. Hamzic , A. Vaures , G. Faini , J. Ben Youssef , H. Le Gall

When a ferromagnet is deposited on the surface of a topological insulator the topologically protected surface state develops a gap and becomes a 2-dimensional quantum Hall liquid. We demonstrate that the Hall current in such a liquid,…

Materials Science · Physics 2015-05-14 Ion Garate , M. Franz

Electrical currents at the surface or edge of a topological insulator are intrinsically spin-polarized. We show that such surface/edge currents can be used to switch the orientation of a molecular magnet weakly coupled to the surface or…

Mesoscale and Nanoscale Physics · Physics 2017-04-05 Elina Locane , Piet W. Brouwer

Electrical current manipulation of magnetization switching through spin-orbital coupling in ferromagnetic semiconductor (Ga,Mn)As Hall bar devices has been investigated. The efficiency of the current-controlled magnetization switching is…

Electrical switching of N\'eel order in an antiferromagnetic insulator is desirable as a basis for memory applications. Unlike electrically-driven switching of ferromagnetic order via spin-orbit torques, electrical switching of…

A new current induced spin-torque transfer effect has been observed in a single ferromagnetic layer without resorting to multilayers. At a specific current density of one polarity injected from a point contact, abrupt resistance changes due…

Condensed Matter · Physics 2009-11-07 Y. Ji , C. L. Chien

Current-induced magnetization switching by spin-orbit torque (SOT) holds considerable promise for next generation ultralow-power memory and logic applications. In most cases, generation of spin-orbit torques has relied on an external…

Mesoscale and Nanoscale Physics · Physics 2020-03-03 Yu Sheng , Yi Cao , Kevin William Edmonds , Yang Ji , Houzhi Zheng , Kaiyou Wang

Slow magnetic relaxation and two level fluctuations measurements under high current injection is performed in single-contacted ferromagnetic nanostructures. The magnetic configurations of the samples are described by two metastable states…

Mesoscale and Nanoscale Physics · Physics 2009-11-10 J. -E. Wegrowe

The continuous reduction of magnetic units to ultra small length scales inspires efforts to look for a suitable means of controlling magnetic states. In this study we show two surface charge alteration techniques for tuning the interlayer…

Mesoscale and Nanoscale Physics · Physics 2015-09-02 Tamene R. Dasa , Valeri S. Stepanyuk

We report on the non-linear in-plane electrical transport in coherently grown [La0.7Sr0.3MnO3/SrTiO3] multilayers with ultrathin (< 3 nm) single layers. Current-induced switching of the conductance, with low conductance at larger currents,…

Strongly Correlated Electrons · Physics 2009-09-25 K. Doerr , K. -H. Mueller , T. Walter , M. Sahana , D. Eckert , K. Nenkov , L. Schultz , K. Brand , M. Lehmann

Enabling field-free current-induced switching of perpendicular magnetization is essential for advancing spin-orbit-torque magnetic random access memory technology. Our research on the Pt/Co/Ru/RuO2(101) system has successfully demonstrated…

Applied Physics · Physics 2024-10-11 Yunzhuo Wu , Tong Wu , Haoran Chen , Yongwei Cui , Hongyue Xu , Nan Jiang , Zhen Cheng , Yizheng Wu
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