Related papers: Growth of Thin Oxidation-Resistive Crystalline Si …

Graphene is generally considered to be a strong candidate to succeed silicon as an electronic material. However, to date, it actually has not yet demonstrated capabilities that exceed standard semiconducting materials. Currently…

Realization of post-CMOS graphene electronics requires production of semiconducting graphene, which has been a labor-intensive process. We present tailoring of silicon carbide crystals via conventional photolithography and microelectronics…

Graphene, a flat monolayer of carbon atoms tightly packed into a two-dimensional honeycomb lattice (a one atom thick graphite sheet), is presently the hottest material in nanoscience and nanotechnology. Its challenging hypothetical…

We use scanning tunneling microscopy and spectroscopy to study epitaxial graphene grown on a C-face 4H-SiC(000-1) substrate. The results reveal amazing nano-objects at the graphene/SiC interface leading to electronic interface states. Their…

Nanoscale ridges in epitaxial multilayer graphene grown on the silicon face of 4 degree off-cut 4H-SiC (0001) were found using scanning tunneling microscopy (STM). These nano-ridges are only 0.1 nm high and 25-50 nm wide, making them much…

This paper describes the behavior of top gated transistors fabricated using carbon, particularly epitaxial graphene on SiC, as the active material. In the past decade research has identified carbon-based electronics as a possible…

Patterning of graphene is key for device fabrication. We report a way to increase or reduce the number of layers in epitaxial graphene grown on the C-face (000-1) of silicon carbide by the deposition of a 120 nm to 150nm-thick silicon…

Single-crystalline transition metal films are ideal playing fields for the epitaxial growth of graphene and graphene-base materials. Graphene-silicon layered structures were successfully constructed on Ir(111) thin film on Si substrate with…

Poor quality interfaces between metal and graphene cause non-linearity and impair the carrier mobility in graphene devices. Here, we use aberration corrected scanning transmission electron microscopy to observe hexagonally close-packed Ti…

We demonstrate a technique to produce thin graphene layers on C-face of SiC under ultra high vacuum conditions. A stack of two SiC substrates comprising a half open cavity at the interface is used to partially confine the depleted Si atoms…

We employ scanning probe microscopy to reveal atomic structures and nanoscale morphology of graphene-based electronic devices (i.e. a graphene sheet supported by an insulating silicon dioxide substrate) for the first time. Atomic resolution…

Graphene nanoelectronics potential was limited by the lack of an intrinsic bandgap[1] and attempts to tailor a bandgap either by quantum confinement or by chemical functionalization failed to produce a semiconductor with a large enough band…

Graphene is a promising contender to succeed the throne of silicon in electronics. To this goal, large-scale epitaxial growth of graphene on substrates should be developed. Among various methods along this line, epitaxial growth of graphene…

Integrating graphene with plasmonic nanostructures results in multifunctional hybrid systems with enhanced performance for numerous applications. In this work, we take advantage of the remarkable mechanical properties of graphene to combine…

Nanostructured electronic devices, such as those based on graphene, are typically grown on top of the insulator SiO2. Their exposure to a flux of small size-selected silver nanoparticles has revealed remarkably selective adhesion: the…

Suspended graphene membrane presents a particular structure with fundamental interests and applications in nanomechanics, thermal transport and optoelectronics. Till now, the commonly used geometries are still quite simple and limited to…

We demonstrate anisotropic etching of single-layer graphene by thermally-activated nickel nanoparticles. Using this technique, we obtain sub-10nm nanoribbons and other graphene nanostructures with edges aligned along a single…

In this paper, we study the morphologic interaction between graphene and Si nanowires on a SiO2 substrate, using molecular mechanics simulations. Two cases are considered: 1) a graphene nanoribbon intercalated by a single Si nanowire on a…

Raman studies of nanocomposite SiCN thin film by sputtering showed that with an increase of substrate temperature from room temperature to 500oC, a transition from mostly sp2 graphitic phase to sp3 carbon took place which was observed from…

We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nano selective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of…