Graphene-Silicon Layered Structures on Single-crystalline Ir(111) Thin Films

Yande Que; Yong Zhang; Yeliang Wang; Li Huang; Wenyan Xu; Jing Tao; Lijun Wu; Yimei Zhu; Kisslinger Kim; Michael Weinl; Matthias Schreck; Chengmin Shen; Shixuan Du; Yunqi Liu; H. -J. Gao

doi:10.1002/admi.201400543

Graphene-Silicon Layered Structures on Single-crystalline Ir(111) Thin Films

Materials Science 2015-03-03 v1 Mesoscale and Nanoscale Physics

Authors: Yande Que , Yong Zhang , Yeliang Wang , Li Huang , Wenyan Xu , Jing Tao , Lijun Wu , Yimei Zhu , Kisslinger Kim , Michael Weinl , Matthias Schreck , Chengmin Shen , Shixuan Du , Yunqi Liu , H. -J. Gao

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Abstract

Single-crystalline transition metal films are ideal playing fields for the epitaxial growth of graphene and graphene-base materials. Graphene-silicon layered structures were successfully constructed on Ir(111) thin film on Si substrate with an yttria-stabilized zirconia buffer layer via intercalation approach. Such hetero-layered structures are compatible with current Si-based microelectronic technique, showing high promise for applications in future micro- and nano-electronic devices.

Keywords

epitaxial graphene epitaxial thin films graphene

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@article{arxiv.1503.00392,
  title  = {Graphene-Silicon Layered Structures on Single-crystalline Ir(111) Thin Films},
  author = {Yande Que and Yong Zhang and Yeliang Wang and Li Huang and Wenyan Xu and Jing Tao and Lijun Wu and Yimei Zhu and Kisslinger Kim and Michael Weinl and Matthias Schreck and Chengmin Shen and Shixuan Du and Yunqi Liu and H. -J. Gao},
  journal= {arXiv preprint arXiv:1503.00392},
  year   = {2015}
}

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14 pages, 6 figures

Graphene-Silicon Layered Structures on Single-crystalline Ir(111) Thin Films

Abstract

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