Related papers: Memory effects in the ion conductor Rb$_{2}$Ti$_{2…
In order to separate the universal and sample-specific effects in the conductivity of high-mobility Si inversion layers, we studied the electron transport in the same device after cooling it down to 4K at different fixed values of the gate…
We have measured the dielectric constant and the pyroelectric current of orthorhombic (space group $Pbam$) NdCrTiO$_5$ polycrystalline samples. The dielectric constant and the pyroelectric current show features associated with ferroelectric…
Reactive metal electrodes (Nb, Ti, Cr, Ta, and Hf) are shown to play an important role in controlling the volatile switching characteristics of metal/Nb2O5/Pt devices. In particular, devices are shown to exhibit stable threshold switching…
Structural, electrical and magnetic measurements of 115 single crystals of PrIn$_5$ are reported. It has a tetragonal structure and has slightly lower cell volume than its isomorphic counter part CeCoIn_5. The resistivity saturates for…
The persistent and switchable polarization of ferroelectric materials based on HfO$_2$-based ferroelectric compounds, compatible with large-scale integration, are attractive synaptic elements for neuromorphic computing. To achieve a record…
Considering certain interesting features in the previously reported 166Er Moessbauer effect and neutron diffraction data on the polycrystalline form of ErPd2Si2 crystallizing in ThCr2Si2-type tetragonal structure, we have carried out…
The kineticts of magnetization reversal of stripe-shaped permalloy-niobium hybrid nanofilms is studied in 6-300 K temperature range by means of magneto-optics visualization technique. The niobium influence on magnetic domain walls type and…
Resistivity and specific heat measurements were performed in the low carrier unconventional superconductor URu2Si2 on various samples with very different qualities. The superconducting transition temperature (TSC) and the hidden order…
A polycrystalline sample of the MgB_2 superconductor was investigated by measurements of the electrical resistivity, the thermopower and the thermal conductivity in the temperature range between 1.8K and 300K in zero magnetic field. The…
The memristor, the recently discovered fundamental circuit element, is of great interest for neuromorphic computing, nonlinear electronics and computer memory. It is usually modelled either using Chua's equations, which lack material device…
A series of (1-x)[(2BaO-0,5Na2O)-1P2O5] -xNb2O5 (BNPN, x=0,41, 0,43, 0,45, 0,48) glass-ceramics based on phosphate glasses have been prepared via a controlled-crystallization route. The structure, dielectric properties, interfacial…
We have investigated the magnetic and transport properties of a polycrystalline Pr2Pt3Si5 sample through the dc and ac magnetic susceptibilities, electrical resistivity, and specific heat measurements. The Rietveld refinement of the powder…
Shape memory alloys are known to memorise one -or several- temperatures at which the martensite-austenite transformation was stopped before completion in the past, the memory manifesting as specific dips in subsequent calorimetric scans.…
High-pressure electrical resistivity, r(T), measurements on intermetallic Pr(Co, Ni, Pt)2B2C compounds were performed down to 2K. At room pressure the r(T) in a-b direction curves for the non superconducting Pr(Co, Ni)2B2C compounds exhibit…
We have studied Bi-2212 microcrystals aged at ambient conditions for 40 days. Combined x-ray absorption near edge structure and x-ray fluorescence measurements with micrometer space resolution show both an increase of Cu$^{+}$ with respect…
Resistance drift in phase change materials is characterized in amorphous phase change memory line-cells from 300 K to 125 K range and is observed to follow the previously reported power-law behavior with drift coefficients in the 0.07 to…
Ferroelectric materials offer unprecedented ultrafast responses and are of great interest for the development of new polarizable media under the influence of an electromagnetic field. Recent research efforts have demonstrated the role of…
The origin of magnetic frustration was stated and the ions whose shift is accompanied by emerging magnetic ordering and ferroelectricity in TbMn2O5 and BiMn2O5 were determined on the basis of calculation of magnetic coupling parameters by…
We discuss memory effects in the conductance of hopping insulators due to slow rearrangements of many-electron clusters leading to formation of polarons close to the electron hopping sites. An abrupt change in the gate voltage and…
The high-temperature ferroelectric order and a remarkable magnetoelectric effect driven by the magnetic field cooling are reported in R2BaCuO5 (R = Er, Dy, Sm) series. The ferroelectric (FE) orders are observed at much higher temperatures…