Related papers: Memory effects in the ion conductor Rb$_{2}$Ti$_{2…
Memory effects are ubiquitous in nature and are particularly relevant at the nanoscale where the dynamical properties of electrons and ions strongly depend on the history of the system, at least within certain time scales. We review here…
Recently we have reported the observation of colossal magnetostriction effect in HoMn2O5 single crystals. Besides we have made the supposition for possible correlation between the peculiarities, observed in the field depended polarization…
The electrical properties of thin TiO2 films have recently been extensively exploited towards enabling a variety for metal-oxide electron devices: unipolar/bipolar semiconductor devices and/or memristors. In such efforts, investigations on…
We have investigated transport properties of CrO2 thin films deposited on TiO2 and sapphire substrates. The films are good metals down to low temperatures. The residual resistivity is of the order of 6 micro-ohhmcm for films deposited on…
Memory effects during metal-insulator transitions in quantum materials reveal complex physics and potential for novel electronics mimicking biological neural systems. Nonetheless, understanding of memory and nonlinearity in sequential…
A strong increase of the thermal conductivity is observed at the phase transition (Tc =18.2 K) in Cu2Te2O5Cl2 single crystal. This behavior is compared with that of spin- Peierls system NaV2O5, where similar experimental observation has…
Cuprate superconductors are strongly sensitive materials to disorder and oxygen stoichiometry; even minute variations of those parameters drastically change their electronic properties. Here we exploit this characteristic to engineer a…
We have studied the magnetization of a series of spin-charge ordered La(2-x)Sr(x)NiO(4+delta) single crystals with 0 < x < 0.5. For fields applied parallel to the ab plane there is a large irreversibility below a temperature T(F1) ~ 50 K…
Rb2Ti2O5 (RTO) has recently been demonstrated to be a solid electrolyte, producing colossal capacitance when interfaced with metals. In order to understand the mechanisms leading to such colossal equivalent permittivity (up to four orders…
Interfacial polarization-charge accumulation at the heterointerface-is a well-established tool in semiconductors, but its influence in metals remains unexplored. Here, we demonstrate that interfacial polarization can robustly modulate…
Memristive circuit elements constitute a cornerstone for novel electronic applications, such as neuromorphic computing, called to revolutionize information technologies. By definition, memristors are sensitive to the history of electrical…
Two-dimensional (2D) materials are suitable hosts for the intercalation of extrinsic guest ions such as Li+, Na+ and K+ as the interlayer coupling is weak. This allows ion intercalation engineering of 2D materials, which may be a key to…
A dielectric anomaly has been found near the incommensurate to commensurate antiferromagnetic phase transition (TN2=230 K) in YBaCuFeO5 ceramics, a compound which crystallizes in an ordered perovskite structure. The existence of electric…
Crystal and magnetic structures of $R_2$Ni$_2$In ($R$ = Tb and Ho) have been studied by powder neutron diffraction at low temperatures. The compounds crystallize in an orthorhombic crystal structure of the Mn$_2$AlB$_2$-type. At low…
The (001) surfaces of polar perovskites BaTiO$_3$ and PbTiO$_3$ have been studied from first principles at T=0 K. For both cases of polarization, the most stable TiO-terminated interfaces show intrinsic ferroelectricity. In the topmost…
We introduce an open-source, fully atomistic second-principles interatomic potential for lead titanate (PbTiO3), a benchmark ferroelectric material known for its strong polarization and hightemperature phase transitions. While density…
The in-plane magnetoresistance (MR) of a single crystal La_{1.97}Sr_{0.03}CuO_{4} has been studied at low temperatures T using several experimental protocols. At T well below the spin-glass transition temperature, the MR becomes positive…
My research is dedicated to the electronic properties of functional oxides. My activity specifically focuses on ferroelectric tunnel junctions in which an ultrathin layer of ferroelectric material is intercalated between two metallic…
Field-effect transistors based on molybdenum disulfide (MoS$_2$) exhibit a hysteresis in their transfer characteristics, which can be utilized to realize 2D memory devices. This hysteresis has been attributed to charge trapping due to…
We report magnetotransport measurements on high purity sintered samples of spintronic CrO2 in an unexplored crystallographic regime between 5-300 K. The negative magnetoresistance (MR) as derived from RH isotherms is observed to be…